Scalability of h-BN Based Memristors: Yield and Variability Considerations

Abdelrahman S. Abdelrahman; Hesham Elsawy; Mario Lanza; Deji Akinwande; Feras Al-Dirini

doi:10.23919/SNW57900.2023.10183973

Scalability of h-BN Based Memristors: Yield and Variability Considerations

Abdelrahman S. Abdelrahman, Hesham Elsawy, Mario Lanza, Deji Akinwande, Feras Al-Dirini

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

This paper investigates the impact of scalability on h-BN based memristors, with a focus on yield and variability. Motivated by the atomic-defect-enabled operation mechanism of h-BN memristors, a stochastic geometry modelling framework is employed to characterize the distribution of atomic defects across a large array of devices. This is coupled with a probabilistic defect activation model to characterize the SET voltage. The model is benchmarked to experimental results for monolayer and multi-layer h-BN devices. The presented results highlight the profound impact of scalability on device yield, device-to-device variability and SET voltage.

Original language	English
Title of host publication	2023 Silicon Nanoelectronics Workshop, SNW 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	109-110
Number of pages	2
ISBN (Electronic)	9784863488083
DOIs	https://doi.org/10.23919/SNW57900.2023.10183973
State	Published - 2023
Event	26th Silicon Nanoelectronics Workshop, SNW 2023 - Kyoto, Japan Duration: 11 Jun 2023 → 12 Jun 2023

Publication series

Name	2023 Silicon Nanoelectronics Workshop, SNW 2023

Conference

Conference	26th Silicon Nanoelectronics Workshop, SNW 2023
Country/Territory	Japan
City	Kyoto
Period	11/06/23 → 12/06/23

Bibliographical note

Publisher Copyright:
© 2023 JSAP.

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality
Electronic, Optical and Magnetic Materials

Access to Document

10.23919/SNW57900.2023.10183973

Cite this

Abdelrahman, A. S., Elsawy, H., Lanza, M., Akinwande, D., & Al-Dirini, F. (2023). Scalability of h-BN Based Memristors: Yield and Variability Considerations. In 2023 Silicon Nanoelectronics Workshop, SNW 2023 (pp. 109-110). (2023 Silicon Nanoelectronics Workshop, SNW 2023). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/SNW57900.2023.10183973

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title = "Scalability of h-BN Based Memristors: Yield and Variability Considerations",

abstract = "This paper investigates the impact of scalability on h-BN based memristors, with a focus on yield and variability. Motivated by the atomic-defect-enabled operation mechanism of h-BN memristors, a stochastic geometry modelling framework is employed to characterize the distribution of atomic defects across a large array of devices. This is coupled with a probabilistic defect activation model to characterize the SET voltage. The model is benchmarked to experimental results for monolayer and multi-layer h-BN devices. The presented results highlight the profound impact of scalability on device yield, device-to-device variability and SET voltage.",

author = "Abdelrahman, {Abdelrahman S.} and Hesham Elsawy and Mario Lanza and Deji Akinwande and Feras Al-Dirini",

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year = "2023",

doi = "10.23919/SNW57900.2023.10183973",

language = "English",

series = "2023 Silicon Nanoelectronics Workshop, SNW 2023",

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Abdelrahman, AS, Elsawy, H, Lanza, M, Akinwande, D & Al-Dirini, F 2023, Scalability of h-BN Based Memristors: Yield and Variability Considerations. in 2023 Silicon Nanoelectronics Workshop, SNW 2023. 2023 Silicon Nanoelectronics Workshop, SNW 2023, Institute of Electrical and Electronics Engineers Inc., pp. 109-110, 26th Silicon Nanoelectronics Workshop, SNW 2023, Kyoto, Japan, 11/06/23. https://doi.org/10.23919/SNW57900.2023.10183973

Scalability of h-BN Based Memristors: Yield and Variability Considerations. / Abdelrahman, Abdelrahman S.; Elsawy, Hesham; Lanza, Mario et al.
2023 Silicon Nanoelectronics Workshop, SNW 2023. Institute of Electrical and Electronics Engineers Inc., 2023. p. 109-110 (2023 Silicon Nanoelectronics Workshop, SNW 2023).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Akinwande, Deji

AU - Al-Dirini, Feras

PY - 2023

Y1 - 2023

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AB - This paper investigates the impact of scalability on h-BN based memristors, with a focus on yield and variability. Motivated by the atomic-defect-enabled operation mechanism of h-BN memristors, a stochastic geometry modelling framework is employed to characterize the distribution of atomic defects across a large array of devices. This is coupled with a probabilistic defect activation model to characterize the SET voltage. The model is benchmarked to experimental results for monolayer and multi-layer h-BN devices. The presented results highlight the profound impact of scalability on device yield, device-to-device variability and SET voltage.

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PB - Institute of Electrical and Electronics Engineers Inc.

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ER -

Scalability of h-BN Based Memristors: Yield and Variability Considerations

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ASJC Scopus subject areas

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