Scalability of h-BN Based Memristors: Yield and Variability Considerations

Abdelrahman S. Abdelrahman, Hesham Elsawy, Mario Lanza, Deji Akinwande, Feras Al-Dirini

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


This paper investigates the impact of scalability on h-BN based memristors, with a focus on yield and variability. Motivated by the atomic-defect-enabled operation mechanism of h-BN memristors, a stochastic geometry modelling framework is employed to characterize the distribution of atomic defects across a large array of devices. This is coupled with a probabilistic defect activation model to characterize the SET voltage. The model is benchmarked to experimental results for monolayer and multi-layer h-BN devices. The presented results highlight the profound impact of scalability on device yield, device-to-device variability and SET voltage.

Original languageEnglish
Title of host publication2023 Silicon Nanoelectronics Workshop, SNW 2023
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages2
ISBN (Electronic)9784863488083
StatePublished - 2023
Event26th Silicon Nanoelectronics Workshop, SNW 2023 - Kyoto, Japan
Duration: 11 Jun 202312 Jun 2023

Publication series

Name2023 Silicon Nanoelectronics Workshop, SNW 2023


Conference26th Silicon Nanoelectronics Workshop, SNW 2023

Bibliographical note

Publisher Copyright:
© 2023 JSAP.

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality
  • Electronic, Optical and Magnetic Materials


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