RF Watt-Level Low-Insertion-Loss High-Bandwidth SOI CMOS Switches

Cameron Hill; Cooper S. Levy; Hussam AlShammary; Ahmed Hamza; James F. Buckwalter

doi:10.1109/TMTT.2018.2876825

RF Watt-Level Low-Insertion-Loss High-Bandwidth SOI CMOS Switches

Cameron Hill^*
, Cooper S. Levy
, Hussam AlShammary
, Ahmed Hamza
, James F. Buckwalter

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

CMOS RF switches support watt-level RF output power while enabling signal processing with high speed. Typically, RF FET switches offer a tradeoff between a power handling and modulation bandwidth. This paper investigates the cause of compression in a FET switch, and the analysis suggests the optimization of the gate driving impedance for a stacked-FET switch. A design methodology is presented to realize watt-level power handling with high fractional bandwidth (FBW). The measurements demonstrate a BPSK modulator that can handle up to 10 W with wide FBW. The high-power, low-insertion loss, and high-modulation bandwidth demonstrate record performance.

Original language	English
Article number	8534408
Pages (from-to)	5724-5736
Number of pages	13
Journal	IEEE Transactions on Microwave Theory and Techniques
Volume	66
Issue number	12
DOIs	https://doi.org/10.1109/TMTT.2018.2876825
State	Published - Dec 2018

Bibliographical note

Publisher Copyright:
© 2018 IEEE.

Keywords

CMOS
modulator
RF switches
SOI
stacked FET

ASJC Scopus subject areas

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/TMTT.2018.2876825

Cite this

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title = "RF Watt-Level Low-Insertion-Loss High-Bandwidth SOI CMOS Switches",

abstract = "CMOS RF switches support watt-level RF output power while enabling signal processing with high speed. Typically, RF FET switches offer a tradeoff between a power handling and modulation bandwidth. This paper investigates the cause of compression in a FET switch, and the analysis suggests the optimization of the gate driving impedance for a stacked-FET switch. A design methodology is presented to realize watt-level power handling with high fractional bandwidth (FBW). The measurements demonstrate a BPSK modulator that can handle up to 10 W with wide FBW. The high-power, low-insertion loss, and high-modulation bandwidth demonstrate record performance.",

keywords = "CMOS, modulator, RF switches, SOI, stacked FET",

author = "Cameron Hill and Levy, \{Cooper S.\} and Hussam AlShammary and Ahmed Hamza and Buckwalter, \{James F.\}",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.",

year = "2018",

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AU - Hill, Cameron

AU - Levy, Cooper S.

AU - AlShammary, Hussam

AU - Hamza, Ahmed

AU - Buckwalter, James F.

PY - 2018/12

Y1 - 2018/12

N2 - CMOS RF switches support watt-level RF output power while enabling signal processing with high speed. Typically, RF FET switches offer a tradeoff between a power handling and modulation bandwidth. This paper investigates the cause of compression in a FET switch, and the analysis suggests the optimization of the gate driving impedance for a stacked-FET switch. A design methodology is presented to realize watt-level power handling with high fractional bandwidth (FBW). The measurements demonstrate a BPSK modulator that can handle up to 10 W with wide FBW. The high-power, low-insertion loss, and high-modulation bandwidth demonstrate record performance.

AB - CMOS RF switches support watt-level RF output power while enabling signal processing with high speed. Typically, RF FET switches offer a tradeoff between a power handling and modulation bandwidth. This paper investigates the cause of compression in a FET switch, and the analysis suggests the optimization of the gate driving impedance for a stacked-FET switch. A design methodology is presented to realize watt-level power handling with high fractional bandwidth (FBW). The measurements demonstrate a BPSK modulator that can handle up to 10 W with wide FBW. The high-power, low-insertion loss, and high-modulation bandwidth demonstrate record performance.

KW - CMOS

KW - modulator

KW - RF switches

KW - SOI

KW - stacked FET

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JO - IEEE Transactions on Microwave Theory and Techniques

JF - IEEE Transactions on Microwave Theory and Techniques

IS - 12

M1 - 8534408

ER -

RF Watt-Level Low-Insertion-Loss High-Bandwidth SOI CMOS Switches

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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