Reveal the fast and charge-insensitive lattice diffusion of silver in cubic silicon carbide via first-principles calculations

Qing Peng*, Nanjun Chen, Zhijie Jiao, Isabella J. van Rooyen, William F. Skerjanc, Fei Gao

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

The lattice diffusion of silver with various charge states in cubic silicon carbide has been investigated by means of high-fidelity spin-polarized density functional theory calculations. The migration energy barrier of the Ag interstitial diffusion is 1.09 eV and 1.11 eV for neutral and q=+1e charge state, respectively, close to the activation energy of Ag diffusion measured in the German HTR fuel program. A general trend is that the migration energy barrier reduces with respect to the increase of charge on Ag, which is much less than the increment in the oxidation energy, suggesting that the lattice diffusion of silver prefers constant neutral state without redox in transition state. Our results indicate a scenario that once Ag is deposited to interstitials via the kickout mechanism, it will highly likely perform lattice diffusion across the SiC layer leading to fast release of Ag in Tristructural-Isotropic fuel induced by irradiation.

Original languageEnglish
Article number109190
JournalComputational Materials Science
Volume170
DOIs
StatePublished - Dec 2019
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2019

Keywords

  • First-principles calculations
  • Lattice diffusion
  • Radiation damage
  • Silicon carbide
  • Silver release

ASJC Scopus subject areas

  • General Computer Science
  • General Chemistry
  • General Materials Science
  • Mechanics of Materials
  • General Physics and Astronomy
  • Computational Mathematics

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