Response to comments on "enhancing the Photovoltaic Effect in the Infrared Region by Germanium Quantum Dots Inserted in the Intrinsic Region of a Silicon p-i-n Diode with Nanostructure"

H. M. Tawancy

doi:10.1007/s10853-011-6028-0

Response to comments on "enhancing the Photovoltaic Effect in the Infrared Region by Germanium Quantum Dots Inserted in the Intrinsic Region of a Silicon p-i-n Diode with Nanostructure"

H. M. Tawancy^*

^*Corresponding author for this work

King Fahd University of Petroleum & Minerals

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

It is the objective of this letter to respond to the comments on the paper entitled "Enhancing the Photovoltaic Effect in the Infrared Region by Germanium Quantum Dots Inserted in the Intrinsic Region of a Si p-i-n Diode with Nanostructure". Evidence is presented to show that the comments are unfounded and contrary to the truth. Although the authors were funded to carry out specific research, they provided some data taken from their already published work.

Original language	English
Pages (from-to)	104-107
Number of pages	4
Journal	Journal of Materials Science
Volume	47
Issue number	1
DOIs	https://doi.org/10.1007/s10853-011-6028-0
State	Published - Jan 2012

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

ASJC Scopus subject areas

General Materials Science
Mechanics of Materials
Mechanical Engineering

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10.1007/s10853-011-6028-0

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Response to comments on "enhancing the Photovoltaic Effect in the Infrared Region by Germanium Quantum Dots Inserted in the Intrinsic Region of a Silicon p-i-n Diode with Nanostructure"

Abstract

UN SDGs

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