Recent progress on irradiation-induced defect engineering of two-dimensional 2H-MoS                         2                          few layers

Guang Yi Zhao; Hua Deng; Nathaniel Tyree; Michael Guy; Abdellah Lisfi; Qing Peng; Jia An Yan; Chundong Wang; Yucheng Lan

doi:10.3390/app9040678

Recent progress on irradiation-induced defect engineering of two-dimensional 2H-MoS ₂ few layers

Guang Yi Zhao^*
, Hua Deng
, Nathaniel Tyree
, Michael Guy
, Abdellah Lisfi
, Qing Peng
, Jia An Yan
, Chundong Wang
, Yucheng Lan

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

81 Scopus citations

Abstract

Atom-thick two-dimensional materials usually possess unique properties compared to their bulk counterparts. Their properties are significantly affected by defects, which could be uncontrollably introduced by irradiation. The effects of electromagnetic irradiation and particle irradiation on 2H MoS ₂ two-dimensional nanolayers are reviewed in this paper, covering heavy ions, protons, electrons, gamma rays, X-rays, ultraviolet light, terahertz, and infrared irradiation. Various defects in MoS ₂ layers were created by the defect engineering. Here we focus on their influence on the structural, electronic, catalytic, and magnetic performance of the 2D materials. Additionally, irradiation-induced doping is discussed and involved.

Original language	English
Article number	678
Journal	Applied Sciences (Switzerland)
Volume	9
Issue number	4
DOIs	https://doi.org/10.3390/app9040678
State	Published - 16 Feb 2019
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2019 by the authors.

Keywords

2D material
Irradiation
MoS
Review

ASJC Scopus subject areas

General Materials Science
Instrumentation
General Engineering
Process Chemistry and Technology
Computer Science Applications
Fluid Flow and Transfer Processes

Access to Document

10.3390/app9040678

Cite this

Zhao, G. Y., Deng, H., Tyree, N., Guy, M., Lisfi, A., Peng, Q., Yan, J. A., Wang, C., & Lan, Y. (2019). Recent progress on irradiation-induced defect engineering of two-dimensional 2H-MoS ₂ few layers Applied Sciences (Switzerland), 9(4), Article 678. https://doi.org/10.3390/app9040678

@article{7b706daa864a44e4b2a7ae9cf8bd98fd,

title = " Recent progress on irradiation-induced defect engineering of two-dimensional 2H-MoS 2 few layers ",

abstract = " Atom-thick two-dimensional materials usually possess unique properties compared to their bulk counterparts. Their properties are significantly affected by defects, which could be uncontrollably introduced by irradiation. The effects of electromagnetic irradiation and particle irradiation on 2H MoS 2 two-dimensional nanolayers are reviewed in this paper, covering heavy ions, protons, electrons, gamma rays, X-rays, ultraviolet light, terahertz, and infrared irradiation. Various defects in MoS 2 layers were created by the defect engineering. Here we focus on their influence on the structural, electronic, catalytic, and magnetic performance of the 2D materials. Additionally, irradiation-induced doping is discussed and involved.",

keywords = "2D material, Irradiation, MoS, Review",

author = "Zhao, \{Guang Yi\} and Hua Deng and Nathaniel Tyree and Michael Guy and Abdellah Lisfi and Qing Peng and Yan, \{Jia An\} and Chundong Wang and Yucheng Lan",

note = "Publisher Copyright: {\textcopyright} 2019 by the authors.",

year = "2019",

month = feb,

day = "16",

doi = "10.3390/app9040678",

language = "English",

volume = "9",

journal = "Applied Sciences (Switzerland)",

issn = "2076-3417",

publisher = "Multidisciplinary Digital Publishing Institute (MDPI)",

number = "4",

}

Recent progress on irradiation-induced defect engineering of two-dimensional 2H-MoS ₂ few layers . / Zhao, Guang Yi; Deng, Hua; Tyree, Nathaniel et al.
In: Applied Sciences (Switzerland), Vol. 9, No. 4, 678, 16.02.2019.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Recent progress on irradiation-induced defect engineering of two-dimensional 2H-MoS 2 few layers

AU - Zhao, Guang Yi

AU - Deng, Hua

AU - Tyree, Nathaniel

AU - Guy, Michael

AU - Lisfi, Abdellah

AU - Peng, Qing

AU - Yan, Jia An

AU - Wang, Chundong

AU - Lan, Yucheng

PY - 2019/2/16

Y1 - 2019/2/16

N2 - Atom-thick two-dimensional materials usually possess unique properties compared to their bulk counterparts. Their properties are significantly affected by defects, which could be uncontrollably introduced by irradiation. The effects of electromagnetic irradiation and particle irradiation on 2H MoS 2 two-dimensional nanolayers are reviewed in this paper, covering heavy ions, protons, electrons, gamma rays, X-rays, ultraviolet light, terahertz, and infrared irradiation. Various defects in MoS 2 layers were created by the defect engineering. Here we focus on their influence on the structural, electronic, catalytic, and magnetic performance of the 2D materials. Additionally, irradiation-induced doping is discussed and involved.

AB - Atom-thick two-dimensional materials usually possess unique properties compared to their bulk counterparts. Their properties are significantly affected by defects, which could be uncontrollably introduced by irradiation. The effects of electromagnetic irradiation and particle irradiation on 2H MoS 2 two-dimensional nanolayers are reviewed in this paper, covering heavy ions, protons, electrons, gamma rays, X-rays, ultraviolet light, terahertz, and infrared irradiation. Various defects in MoS 2 layers were created by the defect engineering. Here we focus on their influence on the structural, electronic, catalytic, and magnetic performance of the 2D materials. Additionally, irradiation-induced doping is discussed and involved.

KW - 2D material

KW - Irradiation

KW - MoS

KW - Review

UR - https://www.scopus.com/pages/publications/85061670425

U2 - 10.3390/app9040678

DO - 10.3390/app9040678

M3 - Article

AN - SCOPUS:85061670425

SN - 2076-3417

VL - 9

JO - Applied Sciences (Switzerland)

JF - Applied Sciences (Switzerland)

IS - 4

M1 - 678

ER -

Recent progress on irradiation-induced defect engineering of two-dimensional 2H-MoS 2 few layers