Recent progress in InAs/InP quantum dash nanostructures and devices

Boon S. Ooi; M. Z.M. Khan; T. K. Ng

doi:10.1109/NMDC.2015.7439230

Recent progress in InAs/InP quantum dash nanostructures and devices

Boon S. Ooi, M. Z.M. Khan, T. K. Ng

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this talk, we will give an outline and introduction to the broad inter-band emission devices focusing on the InAs/InP quantum dash material system, device physics and establishment of ultrabroad stimulated emission behavior. In addition, technologies for growing these nanostructures as well as engineer the bandgap of quantum dash based system using epitaxy growth techniques and postgrowth intermixing methods will be presented. At device level, we will focus our discussion on our recent progress in extending the ultra-broad lasing emission from quantum dash lasers, and achievements in broad gain semiconductor optical amplifiers (SOA), mode locked lasers, comb-lasers, wide band superluminsect diodes fabricated on this material system.

Original language	English
Title of host publication	2015 IEEE Nanotechnology Materials and Devices Conference, NMDC 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781467393621
DOIs	https://doi.org/10.1109/NMDC.2015.7439230
State	Published - 22 Mar 2016
Externally published	Yes

Publication series

Name	2015 IEEE Nanotechnology Materials and Devices Conference, NMDC 2015

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

Keywords

InAs/InP material system
broadband emitters
quantum dash
quantum dots

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/NMDC.2015.7439230

Cite this

Ooi, B. S., Khan, M. Z. M., & Ng, T. K. (2016). Recent progress in InAs/InP quantum dash nanostructures and devices. In 2015 IEEE Nanotechnology Materials and Devices Conference, NMDC 2015 Article 7439230 (2015 IEEE Nanotechnology Materials and Devices Conference, NMDC 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NMDC.2015.7439230

@inproceedings{ee6db153f0d145dd9969d94906b4788b,

title = "Recent progress in InAs/InP quantum dash nanostructures and devices",

abstract = "In this talk, we will give an outline and introduction to the broad inter-band emission devices focusing on the InAs/InP quantum dash material system, device physics and establishment of ultrabroad stimulated emission behavior. In addition, technologies for growing these nanostructures as well as engineer the bandgap of quantum dash based system using epitaxy growth techniques and postgrowth intermixing methods will be presented. At device level, we will focus our discussion on our recent progress in extending the ultra-broad lasing emission from quantum dash lasers, and achievements in broad gain semiconductor optical amplifiers (SOA), mode locked lasers, comb-lasers, wide band superluminsect diodes fabricated on this material system.",

keywords = "InAs/InP material system, broadband emitters, quantum dash, quantum dots",

author = "Ooi, \{Boon S.\} and Khan, \{M. Z.M.\} and Ng, \{T. K.\}",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.",

year = "2016",

month = mar,

day = "22",

doi = "10.1109/NMDC.2015.7439230",

language = "English",

series = "2015 IEEE Nanotechnology Materials and Devices Conference, NMDC 2015",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2015 IEEE Nanotechnology Materials and Devices Conference, NMDC 2015",

address = "United States",

}

Recent progress in InAs/InP quantum dash nanostructures and devices. / Ooi, Boon S.; Khan, M. Z.M.; Ng, T. K.
2015 IEEE Nanotechnology Materials and Devices Conference, NMDC 2015. Institute of Electrical and Electronics Engineers Inc., 2016. 7439230 (2015 IEEE Nanotechnology Materials and Devices Conference, NMDC 2015).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Recent progress in InAs/InP quantum dash nanostructures and devices

AU - Ooi, Boon S.

AU - Khan, M. Z.M.

AU - Ng, T. K.

PY - 2016/3/22

Y1 - 2016/3/22

N2 - In this talk, we will give an outline and introduction to the broad inter-band emission devices focusing on the InAs/InP quantum dash material system, device physics and establishment of ultrabroad stimulated emission behavior. In addition, technologies for growing these nanostructures as well as engineer the bandgap of quantum dash based system using epitaxy growth techniques and postgrowth intermixing methods will be presented. At device level, we will focus our discussion on our recent progress in extending the ultra-broad lasing emission from quantum dash lasers, and achievements in broad gain semiconductor optical amplifiers (SOA), mode locked lasers, comb-lasers, wide band superluminsect diodes fabricated on this material system.

AB - In this talk, we will give an outline and introduction to the broad inter-band emission devices focusing on the InAs/InP quantum dash material system, device physics and establishment of ultrabroad stimulated emission behavior. In addition, technologies for growing these nanostructures as well as engineer the bandgap of quantum dash based system using epitaxy growth techniques and postgrowth intermixing methods will be presented. At device level, we will focus our discussion on our recent progress in extending the ultra-broad lasing emission from quantum dash lasers, and achievements in broad gain semiconductor optical amplifiers (SOA), mode locked lasers, comb-lasers, wide band superluminsect diodes fabricated on this material system.

KW - InAs/InP material system

KW - broadband emitters

KW - quantum dash

KW - quantum dots

UR - https://www.scopus.com/pages/publications/84968735304

U2 - 10.1109/NMDC.2015.7439230

DO - 10.1109/NMDC.2015.7439230

M3 - Conference contribution

AN - SCOPUS:84968735304

T3 - 2015 IEEE Nanotechnology Materials and Devices Conference, NMDC 2015

BT - 2015 IEEE Nanotechnology Materials and Devices Conference, NMDC 2015

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Recent progress in InAs/InP quantum dash nanostructures and devices

Abstract

Publication series

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

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Cite this