Raman study of localized recrystallization of amorphous silicon induced by laser beam

Nouar Tabet; Abduljabar Al-Sayoud; Seyed Said; Xiaoming Yang; Yang Yang; A. Syed; El Haj Diallo; Zhihong Wang; Xianbin Wang; Eric Johlin; Christine Simmons; Tonio Buonassisi

doi:10.1109/PVSC.2012.6317637

Raman study of localized recrystallization of amorphous silicon induced by laser beam

Nouar Tabet^*, Abduljabar Al-Sayoud, Seyed Said, Xiaoming Yang, Yang Yang, A. Syed, El Haj Diallo, Zhihong Wang, Xianbin Wang, Eric Johlin, Christine Simmons, Tonio Buonassisi

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

The adoption of amorphous silicon based solar cells has been drastically hindered by the low efficiency of these devices, which is mainly due to a low hole mobility. It has been shown that using both crystallized and amorphous silicon layers in solar cells leads to an enhancement of the device performance. In this study the crystallization of a-Si prepared by PECVD under various growth conditions has been investigated. The growth stresses in the films are determined by measuring the curvature change of the silicon substrate before and after film deposition. Localized crystallization is induced by exposing a-Si films to focused 532 nm laser beam of power ranging from 0.08 to 8 mW. The crystallization process is monitored by recording the Raman spectra after various exposures. The results suggest that growth stresses in the films affect the minimum laser power (threshold power). In addition, a detailed analysis of the width and position of the Raman signal indicates that the silicon grains in the crystallized regions are of few nm diameter.

Original language	English
Title of host publication	Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Pages	364-366
Number of pages	3
DOIs	https://doi.org/10.1109/PVSC.2012.6317637
State	Published - 2012

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Keywords

Raman
amorphous silicon
recrystallization
stresses

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1109/PVSC.2012.6317637

Cite this

Tabet, N., Al-Sayoud, A., Said, S., Yang, X., Yang, Y., Syed, A., Diallo, E. H., Wang, Z., Wang, X., Johlin, E., Simmons, C., & Buonassisi, T. (2012). Raman study of localized recrystallization of amorphous silicon induced by laser beam. In Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012 (pp. 364-366). Article 6317637 (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2012.6317637

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title = "Raman study of localized recrystallization of amorphous silicon induced by laser beam",

abstract = "The adoption of amorphous silicon based solar cells has been drastically hindered by the low efficiency of these devices, which is mainly due to a low hole mobility. It has been shown that using both crystallized and amorphous silicon layers in solar cells leads to an enhancement of the device performance. In this study the crystallization of a-Si prepared by PECVD under various growth conditions has been investigated. The growth stresses in the films are determined by measuring the curvature change of the silicon substrate before and after film deposition. Localized crystallization is induced by exposing a-Si films to focused 532 nm laser beam of power ranging from 0.08 to 8 mW. The crystallization process is monitored by recording the Raman spectra after various exposures. The results suggest that growth stresses in the films affect the minimum laser power (threshold power). In addition, a detailed analysis of the width and position of the Raman signal indicates that the silicon grains in the crystallized regions are of few nm diameter.",

keywords = "Raman, amorphous silicon, recrystallization, stresses",

author = "Nouar Tabet and Abduljabar Al-Sayoud and Seyed Said and Xiaoming Yang and Yang Yang and A. Syed and Diallo, {El Haj} and Zhihong Wang and Xianbin Wang and Eric Johlin and Christine Simmons and Tonio Buonassisi",

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Tabet, N, Al-Sayoud, A, Said, S, Yang, X, Yang, Y, Syed, A, Diallo, EH, Wang, Z, Wang, X, Johlin, E, Simmons, C & Buonassisi, T 2012, Raman study of localized recrystallization of amorphous silicon induced by laser beam. in Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012., 6317637, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 364-366. https://doi.org/10.1109/PVSC.2012.6317637

Raman study of localized recrystallization of amorphous silicon induced by laser beam. / Tabet, Nouar; Al-Sayoud, Abduljabar; Said, Seyed et al.
Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012. 2012. p. 364-366 6317637 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Raman study of localized recrystallization of amorphous silicon induced by laser beam

AU - Tabet, Nouar

AU - Al-Sayoud, Abduljabar

AU - Said, Seyed

AU - Yang, Xiaoming

AU - Yang, Yang

AU - Syed, A.

AU - Diallo, El Haj

AU - Wang, Zhihong

AU - Wang, Xianbin

AU - Johlin, Eric

AU - Simmons, Christine

AU - Buonassisi, Tonio

PY - 2012

Y1 - 2012

N2 - The adoption of amorphous silicon based solar cells has been drastically hindered by the low efficiency of these devices, which is mainly due to a low hole mobility. It has been shown that using both crystallized and amorphous silicon layers in solar cells leads to an enhancement of the device performance. In this study the crystallization of a-Si prepared by PECVD under various growth conditions has been investigated. The growth stresses in the films are determined by measuring the curvature change of the silicon substrate before and after film deposition. Localized crystallization is induced by exposing a-Si films to focused 532 nm laser beam of power ranging from 0.08 to 8 mW. The crystallization process is monitored by recording the Raman spectra after various exposures. The results suggest that growth stresses in the films affect the minimum laser power (threshold power). In addition, a detailed analysis of the width and position of the Raman signal indicates that the silicon grains in the crystallized regions are of few nm diameter.

AB - The adoption of amorphous silicon based solar cells has been drastically hindered by the low efficiency of these devices, which is mainly due to a low hole mobility. It has been shown that using both crystallized and amorphous silicon layers in solar cells leads to an enhancement of the device performance. In this study the crystallization of a-Si prepared by PECVD under various growth conditions has been investigated. The growth stresses in the films are determined by measuring the curvature change of the silicon substrate before and after film deposition. Localized crystallization is induced by exposing a-Si films to focused 532 nm laser beam of power ranging from 0.08 to 8 mW. The crystallization process is monitored by recording the Raman spectra after various exposures. The results suggest that growth stresses in the films affect the minimum laser power (threshold power). In addition, a detailed analysis of the width and position of the Raman signal indicates that the silicon grains in the crystallized regions are of few nm diameter.

KW - Raman

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KW - recrystallization

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SN - 9781467300643

T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

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BT - Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012

ER -

Raman study of localized recrystallization of amorphous silicon induced by laser beam

Abstract

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Keywords

ASJC Scopus subject areas

UN SDGs

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