Abstract
Energy transfer across aluminum and silicon films through phonon transport is examined in line with the laser short-pulse interaction with the aluminum film. The modified two-equation model is incorporated to compute electron and lattice site temperatures in the aluminum film while phonon radiative transport is used to predict equilibrium temperature in the silicon film. The thermal boundary resistance is considered at the interface of the films in the analysis. The numerical scheme using the finite difference method is adopted to solve the governing equations of energy. It is found that lattice site temperature rise is gradual in the aluminum film in the late heating period. However, equilibrium temperature decay is sharp in the region of silicon interface during this period. The thermal boundary resistance lowers lattice site temperature considerably in the region of the aluminum interface.
| Original language | English |
|---|---|
| Pages (from-to) | 43-50 |
| Number of pages | 8 |
| Journal | Optics and Laser Technology |
| Volume | 44 |
| Issue number | 1 |
| DOIs | |
| State | Published - Feb 2012 |
Bibliographical note
Funding Information:The authors acknowledge the support of Center of Excellence for Scientific Research Collaboration with MIT and King Fahd University of Petroleum and Minerals , Dhahran, Saudi Arabia for this work.
Keywords
- Phonon transport
- Short-pulse
- Silicon
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering