Properties of AlN film grown on Si (111)

Yiquan Dai; Shuiming Li; Qian Sun; Qing Peng; Chengqun Gui; Yu Zhou; Sheng Liu

doi:10.1016/j.jcrysgro.2015.11.016

Properties of AlN film grown on Si (111)

Yiquan Dai
, Shuiming Li
, Qian Sun
, Qing Peng
, Chengqun Gui
, Yu Zhou
, Sheng Liu^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

Stress and strain in an AlN film grown on Si (111) substrate have been evaluated by measuring Raman frequency shifts. Mechanical properties and phonon deformation potentials of AlN are evaluated by first principles calculations. The calculation model is verified by comparing the calculated Raman frequencies and frequencies detected from a bulk single crystal. Results show that the two sets of frequencies agree very well with each other. Thus, with the same verified model and parameters, elastic constants and phonon deformation potentials are calculated. Additionally, we successfully develop a numerical model to verify the calculation above and the model itself is also useful to predict properties of crystal films. Finally, the stress, strain, and piezoelectric properties are analyzed and compared for films on different substrates.

Original language	English
Pages (from-to)	76-83
Number of pages	8
Journal	Journal of Crystal Growth
Volume	435
DOIs	https://doi.org/10.1016/j.jcrysgro.2015.11.016
State	Published - 1 Feb 2016
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2015 Elsevier B.V. All rights reserved.

Keywords

A1. Characterization
A1. X-ray microdiffraction
A3. Metalorganic chemical vapor deposition
B1. Nitride
B2. Piezoelectric materials
B2. Semiconductor III-V materials

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2015.11.016

Cite this

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title = "Properties of AlN film grown on Si (111)",

abstract = "Stress and strain in an AlN film grown on Si (111) substrate have been evaluated by measuring Raman frequency shifts. Mechanical properties and phonon deformation potentials of AlN are evaluated by first principles calculations. The calculation model is verified by comparing the calculated Raman frequencies and frequencies detected from a bulk single crystal. Results show that the two sets of frequencies agree very well with each other. Thus, with the same verified model and parameters, elastic constants and phonon deformation potentials are calculated. Additionally, we successfully develop a numerical model to verify the calculation above and the model itself is also useful to predict properties of crystal films. Finally, the stress, strain, and piezoelectric properties are analyzed and compared for films on different substrates.",

keywords = "A1. Characterization, A1. X-ray microdiffraction, A3. Metalorganic chemical vapor deposition, B1. Nitride, B2. Piezoelectric materials, B2. Semiconductor III-V materials",

author = "Yiquan Dai and Shuiming Li and Qian Sun and Qing Peng and Chengqun Gui and Yu Zhou and Sheng Liu",

year = "2016",

month = feb,

day = "1",

doi = "10.1016/j.jcrysgro.2015.11.016",

language = "English",

volume = "435",

pages = "76--83",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Properties of AlN film grown on Si (111)

AU - Dai, Yiquan

AU - Li, Shuiming

AU - Sun, Qian

AU - Peng, Qing

AU - Gui, Chengqun

AU - Zhou, Yu

AU - Liu, Sheng

PY - 2016/2/1

Y1 - 2016/2/1

N2 - Stress and strain in an AlN film grown on Si (111) substrate have been evaluated by measuring Raman frequency shifts. Mechanical properties and phonon deformation potentials of AlN are evaluated by first principles calculations. The calculation model is verified by comparing the calculated Raman frequencies and frequencies detected from a bulk single crystal. Results show that the two sets of frequencies agree very well with each other. Thus, with the same verified model and parameters, elastic constants and phonon deformation potentials are calculated. Additionally, we successfully develop a numerical model to verify the calculation above and the model itself is also useful to predict properties of crystal films. Finally, the stress, strain, and piezoelectric properties are analyzed and compared for films on different substrates.

AB - Stress and strain in an AlN film grown on Si (111) substrate have been evaluated by measuring Raman frequency shifts. Mechanical properties and phonon deformation potentials of AlN are evaluated by first principles calculations. The calculation model is verified by comparing the calculated Raman frequencies and frequencies detected from a bulk single crystal. Results show that the two sets of frequencies agree very well with each other. Thus, with the same verified model and parameters, elastic constants and phonon deformation potentials are calculated. Additionally, we successfully develop a numerical model to verify the calculation above and the model itself is also useful to predict properties of crystal films. Finally, the stress, strain, and piezoelectric properties are analyzed and compared for films on different substrates.

KW - A1. Characterization

KW - A1. X-ray microdiffraction

KW - A3. Metalorganic chemical vapor deposition

KW - B1. Nitride

KW - B2. Piezoelectric materials

KW - B2. Semiconductor III-V materials

UR - https://www.scopus.com/pages/publications/84949604540

U2 - 10.1016/j.jcrysgro.2015.11.016

DO - 10.1016/j.jcrysgro.2015.11.016

M3 - Article

AN - SCOPUS:84949604540

SN - 0022-0248

VL - 435

SP - 76

EP - 83

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

Properties of AlN film grown on Si (111)

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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