Pressure effect on the growth of oxide layers on germanium substrates

  • J. Al-Sadah*
  • , N. Tabet
  • , M. Salim
  • *Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

6 Scopus citations

Abstract

X-ray Photoelectron Spectroscopy (XPS) was used to investigate the growth of thin oxide layers obtained by dry oxidation on (011) germanium substrates. The heat treatments were carried out, in-situ, at T = 380 °C under various values of air pressure. The quantitative analysis of the XPS spectra suggests the growth of non uniform oxide layers. An apparent thickness of the oxide film was defined as function of the fraction of the oxidized surface and of the actual thickness of the oxide islands. The results show a quasi linear dependence of the apparent thickness versus the air pressure.

Original languageEnglish
Pages (from-to)409-414
Number of pages6
JournalJournal of Electron Spectroscopy and Related Phenomena
Volume114-116
DOIs
StatePublished - Mar 2001

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Radiation
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Spectroscopy
  • Physical and Theoretical Chemistry

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