Abstract
This work is reported the incorporation of boron on diamond particles by annealing process using boric acid as boron source at different temperatures 700, 900, and 1100 °C. Moreover, the electrodes were prepared from pristine diamond (P-ND) and annealed diamond particles (A-ND). Raman, XRD, and FTIR techniques were used to investigate the effect of doping boron in diamond particles. Analysis of the results showed that the boron doping in diamond particles accord at 1100 °C. Cyclic voltammeter and impedance techniques were used to characterize the diamond anode properties after (P-ND) and before (A-ND) annealing treatment. A-ND electrode demonstrated high oxidation power which is suitable for anodic oxidation process. Moreover, reactivity of A-ND anode was higher than that of P-ND anode as a consequence of the presence of boron in the diamond particles of A-ND electrode. 2-chlorophenol was selected as pollutant to investigate the performance of A-ND anode for electro-degradation treatment. The result shows the removal rate of 2-chlorophenol attained 98% after 6 h.
| Original language | English |
|---|---|
| Article number | 137221 |
| Journal | Electrochimica Acta |
| Volume | 362 |
| DOIs | |
| State | Published - 1 Dec 2020 |
Bibliographical note
Publisher Copyright:© 2020
Keywords
- 2-Chlorophenol degradation
- Annealing treatment
- Boron
- Diamond
- Electrochemical oxidation
ASJC Scopus subject areas
- General Chemical Engineering
- Electrochemistry
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