Abstract
BiVO3F is a promising material used in solar energy conversion systems. Here, we report the calculated structural, electronic, and surface reaction properties using the PBE and hybrid density functionals. We found it is a direct band gap semiconductor, and the calculated band gap is consistent with experimental value only using the hybrid density functional with a fraction of Hartree Fock (HF) exchange α=0.1. The (001) surface is the most stable surface among all the low index (001), (010), (100), (110), (101), (011), and (111) surfaces. There are V and Bi sites exposed on (001) surface which can serves as activity sites. That is quite different from BiVO4 where only Bi sties can be taken as surface reaction sites. The OER intermediates OH* and OOH* prefer to form a bridge structure on both V and Bi sites. This makes the first proton removal step is very easy, but the O-O bond is difficult to form which leads the overpotential of OER is very high. Our work plays a guide principle to design the high efficiency photocatalysis and photoanodes based on BiVO3F.
| Original language | English |
|---|---|
| Article number | 112244 |
| Journal | Molecular Catalysis |
| Volume | 524 |
| DOIs | |
| State | Published - May 2022 |
| Externally published | Yes |
Bibliographical note
Publisher Copyright:© 2022
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
ASJC Scopus subject areas
- Catalysis
- Process Chemistry and Technology
- Physical and Theoretical Chemistry
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