Abstract
A Fourier-series model is presented for the capacitance-voltage characteristic of a MOS gate capacitor using transistors biased in the strong inversion or the accumulation region. Using this model closed-form expressions are obtained for predicting the harmonic distortion of the MOS gate capacitor driven by a large-amplitude sinusoidal current. Results are compared with reported experimental observations.
| Original language | English |
|---|---|
| Pages (from-to) | 299-304 |
| Number of pages | 6 |
| Journal | Analog Integrated Circuits and Signal Processing |
| Volume | 16 |
| Issue number | 3 |
| DOIs | |
| State | Published - 1998 |
Keywords
- Harmonic distortion
- MOS capacitors
ASJC Scopus subject areas
- Signal Processing
- Hardware and Architecture
- Surfaces, Coatings and Films
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