Prediction of the Harmonic Distortion in Mosfet Gate Capacitors

Muhammad Taher Abuelma'atti

doi:10.1023/A:1008274528542

Prediction of the Harmonic Distortion in Mosfet Gate Capacitors

Muhammad Taher Abuelma'atti^*

^*Corresponding author for this work

King Fahd University of Petroleum & Minerals

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

A Fourier-series model is presented for the capacitance-voltage characteristic of a MOS gate capacitor using transistors biased in the strong inversion or the accumulation region. Using this model closed-form expressions are obtained for predicting the harmonic distortion of the MOS gate capacitor driven by a large-amplitude sinusoidal current. Results are compared with reported experimental observations.

Original language	English
Pages (from-to)	299-304
Number of pages	6
Journal	Analog Integrated Circuits and Signal Processing
Volume	16
Issue number	3
DOIs	https://doi.org/10.1023/A:1008274528542
State	Published - 1998

Keywords

Harmonic distortion
MOS capacitors

ASJC Scopus subject areas

Signal Processing
Hardware and Architecture
Surfaces, Coatings and Films

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10.1023/A:1008274528542

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title = "Prediction of the Harmonic Distortion in Mosfet Gate Capacitors",

abstract = "A Fourier-series model is presented for the capacitance-voltage characteristic of a MOS gate capacitor using transistors biased in the strong inversion or the accumulation region. Using this model closed-form expressions are obtained for predicting the harmonic distortion of the MOS gate capacitor driven by a large-amplitude sinusoidal current. Results are compared with reported experimental observations.",

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AB - A Fourier-series model is presented for the capacitance-voltage characteristic of a MOS gate capacitor using transistors biased in the strong inversion or the accumulation region. Using this model closed-form expressions are obtained for predicting the harmonic distortion of the MOS gate capacitor driven by a large-amplitude sinusoidal current. Results are compared with reported experimental observations.

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KW - MOS capacitors

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U2 - 10.1023/A:1008274528542

DO - 10.1023/A:1008274528542

M3 - Article

AN - SCOPUS:0032139102

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JO - Analog Integrated Circuits and Signal Processing

JF - Analog Integrated Circuits and Signal Processing

IS - 3

ER -

Prediction of the Harmonic Distortion in Mosfet Gate Capacitors

Abstract

Keywords

ASJC Scopus subject areas

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