Positive magnetoresistance in ferromagnetic Nd-doped In2O 3 thin films grown by pulse laser deposition

G. Z. Xing; J. B. Yi; F. Yan; T. Wu; S. Li

doi:10.1063/1.4879463

Positive magnetoresistance in ferromagnetic Nd-doped In₂O ₃ thin films grown by pulse laser deposition

G. Z. Xing
, J. B. Yi
, F. Yan
, T. Wu
, S. Li

Research output: Contribution to journal › Article › peer-review

65 Scopus citations

Abstract

We report the magnetic and magnetotransport properties of (In _0.985Nd_0.015)₂O_2.89 thin films grown by pulse laser deposition. The clear magnetization hysteresis loops with the complementary magnetic domain structure reveal the intrinsic room temperature ferromagnetism in the as-prepared films. The strong sp-f exchange interaction as a result of the rare earth doping is discussed as the origin of the magnetotransport behaviours. A positive magnetoresistance (∼29.2%) was observed at 5 K and ascribed to the strong ferromagnetic sp-f exchange interaction in (In_0.985Nd_0.015)₂O _2.89 thin films due to a large Zeeman splitting in an external magnetic field of 50 KOe.

Original language	English
Article number	202411
Journal	Applied Physics Letters
Volume	104
Issue number	20
DOIs	https://doi.org/10.1063/1.4879463
State	Published - 19 May 2014
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.4879463

Cite this

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title = "Positive magnetoresistance in ferromagnetic Nd-doped In2O 3 thin films grown by pulse laser deposition",

abstract = "We report the magnetic and magnetotransport properties of (In 0.985Nd0.015)2O2.89 thin films grown by pulse laser deposition. The clear magnetization hysteresis loops with the complementary magnetic domain structure reveal the intrinsic room temperature ferromagnetism in the as-prepared films. The strong sp-f exchange interaction as a result of the rare earth doping is discussed as the origin of the magnetotransport behaviours. A positive magnetoresistance (∼29.2\%) was observed at 5 K and ascribed to the strong ferromagnetic sp-f exchange interaction in (In0.985Nd0.015)2O 2.89 thin films due to a large Zeeman splitting in an external magnetic field of 50 KOe.",

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AU - Xing, G. Z.

AU - Yi, J. B.

AU - Yan, F.

AU - Wu, T.

AU - Li, S.

PY - 2014/5/19

Y1 - 2014/5/19

N2 - We report the magnetic and magnetotransport properties of (In 0.985Nd0.015)2O2.89 thin films grown by pulse laser deposition. The clear magnetization hysteresis loops with the complementary magnetic domain structure reveal the intrinsic room temperature ferromagnetism in the as-prepared films. The strong sp-f exchange interaction as a result of the rare earth doping is discussed as the origin of the magnetotransport behaviours. A positive magnetoresistance (∼29.2%) was observed at 5 K and ascribed to the strong ferromagnetic sp-f exchange interaction in (In0.985Nd0.015)2O 2.89 thin films due to a large Zeeman splitting in an external magnetic field of 50 KOe.

AB - We report the magnetic and magnetotransport properties of (In 0.985Nd0.015)2O2.89 thin films grown by pulse laser deposition. The clear magnetization hysteresis loops with the complementary magnetic domain structure reveal the intrinsic room temperature ferromagnetism in the as-prepared films. The strong sp-f exchange interaction as a result of the rare earth doping is discussed as the origin of the magnetotransport behaviours. A positive magnetoresistance (∼29.2%) was observed at 5 K and ascribed to the strong ferromagnetic sp-f exchange interaction in (In0.985Nd0.015)2O 2.89 thin films due to a large Zeeman splitting in an external magnetic field of 50 KOe.

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