Polymorphism of low-dimensional material with ternary composition chalcogenide Ta2Ni3Se8

Jiho Jeon; Chaeheon Woo; Kyung Hwan Choi; Byung Joo Jeong; Sudong Chae; Seoungbae Oh; Sang Ok Yoon; Jungyoon Ahn; Tae Yeong Kim; Sang Hoon Lee; Xue Dong; Junaid Ali; Ghulam Asghar; Xiaojie Zhang; Jinsu Kang; Jae Hyuk Park; Hak Ki Yu; Jae Young Choi

doi:10.1016/j.jallcom.2022.164463

Polymorphism of low-dimensional material with ternary composition chalcogenide Ta₂Ni₃Se₈

Jiho Jeon, Chaeheon Woo, Kyung Hwan Choi, Byung Joo Jeong, Sudong Chae, Seoungbae Oh, Sang Ok Yoon, Jungyoon Ahn, Tae Yeong Kim, Sang Hoon Lee, Xue Dong, Junaid Ali, Ghulam Asghar, Xiaojie Zhang, Jinsu Kang, Jae Hyuk Park, Hak Ki Yu^*, Jae Young Choi^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

In this study, the polymorphism of Ta₂Ni₃Se₈, a three-component one-dimensional chalcogenide material, was discovered. It was confirmed through X-ray diffraction and transmission electron microscopy analyses that the newly identified tetragonal phase of the compound (T-Ta₂Ni₃Se₈) had a different crystal structure from the previously reported orthorhombic phase (O-Ta₂Ni₃Se₈). Conventional O-Ta₂Ni₃Se₈ is a semiconductor material with ambipolar characteristics, whereas T-Ta₂Ni₃Se₈ showed a metallic characteristic in which the electrical resistance slightly increased as the temperature increased. The change in electrical properties due to the variation in lattice isotropy according to the transformation of the crystal system (orthorhombic to tetragonal) is expected to be an important starting point for polymorphism studies of multi-component low-dimensional materials in the future.

Original language	English
Article number	164463
Journal	Journal of Alloys and Compounds
Volume	907
DOIs	https://doi.org/10.1016/j.jallcom.2022.164463
State	Published - 25 Jun 2022
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2022 Elsevier B.V.

Keywords

1D materials
Low-dimensional materials
Polymorphism
TaNiSe

ASJC Scopus subject areas

Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.jallcom.2022.164463

Cite this

Jeon, J., Woo, C., Choi, K. H., Jeong, B. J., Chae, S., Oh, S., Yoon, S. O., Ahn, J., Kim, T. Y., Lee, S. H., Dong, X., Ali, J., Asghar, G., Zhang, X., Kang, J., Park, J. H., Yu, H. K., & Choi, J. Y. (2022). Polymorphism of low-dimensional material with ternary composition chalcogenide Ta₂Ni₃Se₈. Journal of Alloys and Compounds, 907, Article 164463. https://doi.org/10.1016/j.jallcom.2022.164463

@article{1c7d1827e66f40bea0210d482aa47ef6,

title = "Polymorphism of low-dimensional material with ternary composition chalcogenide Ta2Ni3Se8",

abstract = "In this study, the polymorphism of Ta2Ni3Se8, a three-component one-dimensional chalcogenide material, was discovered. It was confirmed through X-ray diffraction and transmission electron microscopy analyses that the newly identified tetragonal phase of the compound (T-Ta2Ni3Se8) had a different crystal structure from the previously reported orthorhombic phase (O-Ta2Ni3Se8). Conventional O-Ta2Ni3Se8 is a semiconductor material with ambipolar characteristics, whereas T-Ta2Ni3Se8 showed a metallic characteristic in which the electrical resistance slightly increased as the temperature increased. The change in electrical properties due to the variation in lattice isotropy according to the transformation of the crystal system (orthorhombic to tetragonal) is expected to be an important starting point for polymorphism studies of multi-component low-dimensional materials in the future.",

keywords = "1D materials, Low-dimensional materials, Polymorphism, TaNiSe",

author = "Jiho Jeon and Chaeheon Woo and Choi, \{Kyung Hwan\} and Jeong, \{Byung Joo\} and Sudong Chae and Seoungbae Oh and Yoon, \{Sang Ok\} and Jungyoon Ahn and Kim, \{Tae Yeong\} and Lee, \{Sang Hoon\} and Xue Dong and Junaid Ali and Ghulam Asghar and Xiaojie Zhang and Jinsu Kang and Park, \{Jae Hyuk\} and Yu, \{Hak Ki\} and Choi, \{Jae Young\}",

note = "Publisher Copyright: {\textcopyright} 2022 Elsevier B.V.",

year = "2022",

month = jun,

day = "25",

doi = "10.1016/j.jallcom.2022.164463",

language = "English",

volume = "907",

journal = "Journal of Alloys and Compounds",

issn = "0925-8388",

}

TY - JOUR

T1 - Polymorphism of low-dimensional material with ternary composition chalcogenide Ta2Ni3Se8

AU - Jeon, Jiho

AU - Woo, Chaeheon

AU - Choi, Kyung Hwan

AU - Jeong, Byung Joo

AU - Chae, Sudong

AU - Oh, Seoungbae

AU - Yoon, Sang Ok

AU - Ahn, Jungyoon

AU - Kim, Tae Yeong

AU - Lee, Sang Hoon

AU - Dong, Xue

AU - Ali, Junaid

AU - Asghar, Ghulam

AU - Zhang, Xiaojie

AU - Kang, Jinsu

AU - Park, Jae Hyuk

AU - Yu, Hak Ki

AU - Choi, Jae Young

PY - 2022/6/25

Y1 - 2022/6/25

N2 - In this study, the polymorphism of Ta2Ni3Se8, a three-component one-dimensional chalcogenide material, was discovered. It was confirmed through X-ray diffraction and transmission electron microscopy analyses that the newly identified tetragonal phase of the compound (T-Ta2Ni3Se8) had a different crystal structure from the previously reported orthorhombic phase (O-Ta2Ni3Se8). Conventional O-Ta2Ni3Se8 is a semiconductor material with ambipolar characteristics, whereas T-Ta2Ni3Se8 showed a metallic characteristic in which the electrical resistance slightly increased as the temperature increased. The change in electrical properties due to the variation in lattice isotropy according to the transformation of the crystal system (orthorhombic to tetragonal) is expected to be an important starting point for polymorphism studies of multi-component low-dimensional materials in the future.

AB - In this study, the polymorphism of Ta2Ni3Se8, a three-component one-dimensional chalcogenide material, was discovered. It was confirmed through X-ray diffraction and transmission electron microscopy analyses that the newly identified tetragonal phase of the compound (T-Ta2Ni3Se8) had a different crystal structure from the previously reported orthorhombic phase (O-Ta2Ni3Se8). Conventional O-Ta2Ni3Se8 is a semiconductor material with ambipolar characteristics, whereas T-Ta2Ni3Se8 showed a metallic characteristic in which the electrical resistance slightly increased as the temperature increased. The change in electrical properties due to the variation in lattice isotropy according to the transformation of the crystal system (orthorhombic to tetragonal) is expected to be an important starting point for polymorphism studies of multi-component low-dimensional materials in the future.

KW - 1D materials

KW - Low-dimensional materials

KW - Polymorphism

KW - TaNiSe

UR - https://www.scopus.com/pages/publications/85126148792

U2 - 10.1016/j.jallcom.2022.164463

DO - 10.1016/j.jallcom.2022.164463

M3 - Article

AN - SCOPUS:85126148792

SN - 0925-8388

VL - 907

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

M1 - 164463

ER -