Phonon transport in siliconsilicon and silicondiamond thin films: Consideration of thermal boundary resistance at interface

Phonon transport across the siliconsilicon and silicondiamond dielectric films is examined. To simulate the phonon transport in the films EPRT is accounted and numerical solutions are obtained with the consideration of 1 K difference across the films prior to the initiation of the phonon transport. The diffuse mismatch model is introduced to account for the thermal boundary resistance at the interface of the films. To validate the code developed, the steady and transient cases for phonon transport in silicon film are carried out. It is found that the equilibrium temperature of phonons attains higher value at the interface of silicon films in siliconsilicon films than that corresponding to silicondiamond films. The predictions of phonon temperature distribution in the silicon film agree well with its counterpart reported in the previous studies.