Abstract
Phonon transport in dielectric film depends on phonon polarization and their frequencies. This requires the solution of frequency-dependent Boltzmann equations for energy transport in dielectric films. In the present study, a frequency-dependent solution of the Boltzmann equation is obtained for a two-dimensional silicon film, and variation of equivalent equilibrium temperature in the film is presented. The influence of film width on phonon transport in the film is examined. The comparison of equivalent equilibrium temperature obtained from the frequency-dependent and -independent solutions is also presented. It is found that ballistic phonons suppress equivalent equilibrium temperature increase in the film. Two-dimensional phonon transport reduces to one-dimensional transport in film as the film width increases to more than twice of the film thickness.
| Original language | English |
|---|---|
| Pages (from-to) | 153-174 |
| Number of pages | 22 |
| Journal | Journal of Non-Equilibrium Thermodynamics |
| Volume | 38 |
| Issue number | 2 |
| DOIs | |
| State | Published - Jun 2013 |
Bibliographical note
Funding Information:Acknowledgments. The authors acknowledge the support of Deanship of Scientific Research for the funded project IN121018 and the Center of Excellence for Scientific Research Collaboration with MIT and King Fahd University of Petroleum and Minerals in Dhahran, Saudi Arabia, for this work.
Keywords
- Boltzmann transport equation
- Dielectric films
- Equivalent
- Phonon transport
- Silicon films
- Temperature
ASJC Scopus subject areas
- General Chemistry
- General Physics and Astronomy