Phonon radiative transport in silicon-aluminum thin films: Frequency dependent case

S. Bin Mansoor; B. S. Yilbas

doi:10.1016/j.ijthermalsci.2012.01.008

Phonon radiative transport in silicon-aluminum thin films: Frequency dependent case

S. Bin Mansoor, B. S. Yilbas^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

34 Scopus citations

Abstract

Non-equilibrium heating across silicon and aluminum films is considered and frequency dependent phonon radiative transport in the silicon film is incorporated while modified two-equation model is used in the aluminum film to account for the energy transport. Thermal boundary resistance is introduced across the silicon and aluminum films and electron-phonon resistance is incorporated at the interface of the aluminum film. It is found that frequency dependent solution of phonon radiative transfer equation resulted in sharper decay of equivalent equilibrium temperature than that corresponding to frequency independent solution in the silicon film.

Original language	English
Pages (from-to)	54-62
Number of pages	9
Journal	International Journal of Thermal Sciences
Volume	57
DOIs	https://doi.org/10.1016/j.ijthermalsci.2012.01.008
State	Published - Jul 2012

Bibliographical note

Funding Information:
The authors acknowledge the support of Center of Excellence for Scientific Research Collaboration with MIT and King Fahd University of Petroleum and Minerals, Dhahran, Saudi Arabia for this work.

Keywords

Aluminum film
Phonon transport
Silicon film
Two-equation model

ASJC Scopus subject areas

Condensed Matter Physics
General Engineering

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10.1016/j.ijthermalsci.2012.01.008

Cite this

@article{c887c6702209438390cb59ffe86d3943,

title = "Phonon radiative transport in silicon-aluminum thin films: Frequency dependent case",

abstract = "Non-equilibrium heating across silicon and aluminum films is considered and frequency dependent phonon radiative transport in the silicon film is incorporated while modified two-equation model is used in the aluminum film to account for the energy transport. Thermal boundary resistance is introduced across the silicon and aluminum films and electron-phonon resistance is incorporated at the interface of the aluminum film. It is found that frequency dependent solution of phonon radiative transfer equation resulted in sharper decay of equivalent equilibrium temperature than that corresponding to frequency independent solution in the silicon film.",

keywords = "Aluminum film, Phonon transport, Silicon film, Two-equation model",

author = "\{Bin Mansoor\}, S. and Yilbas, \{B. S.\}",

note = "Funding Information: The authors acknowledge the support of Center of Excellence for Scientific Research Collaboration with MIT and King Fahd University of Petroleum and Minerals, Dhahran, Saudi Arabia for this work. ",

year = "2012",

month = jul,

doi = "10.1016/j.ijthermalsci.2012.01.008",

language = "English",

volume = "57",

pages = "54--62",

journal = "International Journal of Thermal Sciences",

issn = "1290-0729",

}

TY - JOUR

T1 - Phonon radiative transport in silicon-aluminum thin films

T2 - Frequency dependent case

AU - Bin Mansoor, S.

AU - Yilbas, B. S.

N1 - Funding Information: The authors acknowledge the support of Center of Excellence for Scientific Research Collaboration with MIT and King Fahd University of Petroleum and Minerals, Dhahran, Saudi Arabia for this work.

PY - 2012/7

Y1 - 2012/7

N2 - Non-equilibrium heating across silicon and aluminum films is considered and frequency dependent phonon radiative transport in the silicon film is incorporated while modified two-equation model is used in the aluminum film to account for the energy transport. Thermal boundary resistance is introduced across the silicon and aluminum films and electron-phonon resistance is incorporated at the interface of the aluminum film. It is found that frequency dependent solution of phonon radiative transfer equation resulted in sharper decay of equivalent equilibrium temperature than that corresponding to frequency independent solution in the silicon film.

AB - Non-equilibrium heating across silicon and aluminum films is considered and frequency dependent phonon radiative transport in the silicon film is incorporated while modified two-equation model is used in the aluminum film to account for the energy transport. Thermal boundary resistance is introduced across the silicon and aluminum films and electron-phonon resistance is incorporated at the interface of the aluminum film. It is found that frequency dependent solution of phonon radiative transfer equation resulted in sharper decay of equivalent equilibrium temperature than that corresponding to frequency independent solution in the silicon film.

KW - Aluminum film

KW - Phonon transport

KW - Silicon film

KW - Two-equation model

UR - https://www.scopus.com/pages/publications/84859894157

U2 - 10.1016/j.ijthermalsci.2012.01.008

DO - 10.1016/j.ijthermalsci.2012.01.008

M3 - Article

AN - SCOPUS:84859894157

SN - 1290-0729

VL - 57

SP - 54

EP - 62

JO - International Journal of Thermal Sciences

JF - International Journal of Thermal Sciences

ER -

Phonon radiative transport in silicon-aluminum thin films: Frequency dependent case

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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