Phonon and electron transport in aluminum thin film: Influence of film thickness on electron and lattice temperatures

B. S. Yilbas*, S. Bin Mansoor

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

23 Scopus citations

Abstract

Influence of film thickness on non-equilibrium energy transport in the aluminum thin film is examined. The solutions of Boltzmann equation and the modified two-equation model are presented to predict electron and phonon temperatures in the film for various film thicknesses. It is found that electron and phonon temperatures predicted from the Boltzmann equation differ from the solution of two-equation model in the film for small film thickness. As the film thickness increases, this difference becomes negligibly small. Two-equation model predicts higher electron and phonon temperatures than those obtained from the solutions of the Boltzmann equation in the vicinity of the high temperature edge. This becomes opposite in the region of the low temperature edge.

Original languageEnglish
Pages (from-to)4643-4648
Number of pages6
JournalPhysica B: Condensed Matter
Volume407
Issue number24
DOIs
StatePublished - 15 Dec 2012

Bibliographical note

Funding Information:
The authors acknowledge the support of Dean Scientific Research for the Thermoelectric Group funded project, King Fahd University of Petroleum and Minerals, Dhahran, Saudi Arabia.

Keywords

  • Boltzmann equation
  • Electron
  • Phonon
  • Two-equation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'Phonon and electron transport in aluminum thin film: Influence of film thickness on electron and lattice temperatures'. Together they form a unique fingerprint.

Cite this