Performance Evaluation of a Gan-HEMT-Based Converter for Concentrated Solar Tower under Harsh Weather Conditions

This research paper explores the practicality of using Gallium Nitride with high-electron-mobility transistors (GaN-HEMTs) based converter in solar power tower (SPT) tracking system. As a part of the SPT heliostat unit, the class-E converter is used to feed the DC motor, and the unit is tested under different loads. SPT drive using this technique reduces switching losses that affect the efficiency of the drive system without affecting the operation of the drive. This makes the SPT drive system more efficient, with less energy consumption and reduced operational costs. The performance of the drive system is demonstrated under different scenarios using MATLAB simulation. Experiments have been conducted on the proposed converters using hardware setup. Simulation results show accurate performance of the drive system and closely match the results of the hardware experiments. This demonstrates the validity of the proposed drive system for use in different applications. Comparing the proposed GaN E-HEMT converters with an identical Silicon (Si-IGBT) has been carried out. The comparison shows that it is a viable option for solar energy harvesting in the KSA hot weather conditions. This converter was found to be much more reliable than the traditional converter, making it an ideal choice for applications that require high temperature operation. Its impressive power-saving capabilities make it an even more attractive option.