Oxidation of van-der-Waals Semiconductors for Neuromorphic Technology

Aferdita Xhameni; Abdul Aziz Almutairi; Antonio Lombardo

doi:10.1109/NMDC57951.2023.10343949

Oxidation of van-der-Waals Semiconductors for Neuromorphic Technology

Aferdita Xhameni
, Abdul Aziz Almutairi
, Antonio Lombardo^*

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Here, we report novel resistive memories based on oxides obtained by the chemical conversion of a two-dimensional van-der-Waals semiconductor: hafnium disulfide (HfS₂). We apply a dry oxidation method, carefully controlling process parameters such as pressure, temperature, and oxygen flow. Hafnium oxides are integrated into crossbar structures, and resistive switching is studied by applying voltage ramps. We demonstrate unipolar switching achieving a RON/R-OFF ratio of ∼ 104 over 115 cycles, showing the potential of this approach for next-generation memristive technology.

Original language	English
Title of host publication	2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	529-531
Number of pages	3
ISBN (Electronic)	9798350335460
DOIs	https://doi.org/10.1109/NMDC57951.2023.10343949
State	Published - 2023
Externally published	Yes
Event	18th IEEE Nanotechnology Materials and Devices Conference, NMDC 2023 - Paestum, Italy Duration: 22 Oct 2023 → 25 Oct 2023

Publication series

Name	2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023

Conference

Conference	18th IEEE Nanotechnology Materials and Devices Conference, NMDC 2023
Country/Territory	Italy
City	Paestum
Period	22/10/23 → 25/10/23

Bibliographical note

Publisher Copyright:
© 2023 IEEE.

ASJC Scopus subject areas

Electrical and Electronic Engineering
Materials Chemistry
Electronic, Optical and Magnetic Materials
Instrumentation
Materials Science (miscellaneous)

Access to Document

10.1109/NMDC57951.2023.10343949

Cite this

Xhameni, A., Almutairi, A. A., & Lombardo, A. (2023). Oxidation of van-der-Waals Semiconductors for Neuromorphic Technology. In 2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023 (pp. 529-531). (2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NMDC57951.2023.10343949

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title = "Oxidation of van-der-Waals Semiconductors for Neuromorphic Technology",

abstract = "Here, we report novel resistive memories based on oxides obtained by the chemical conversion of a two-dimensional van-der-Waals semiconductor: hafnium disulfide (HfS2). We apply a dry oxidation method, carefully controlling process parameters such as pressure, temperature, and oxygen flow. Hafnium oxides are integrated into crossbar structures, and resistive switching is studied by applying voltage ramps. We demonstrate unipolar switching achieving a RON/R-OFF ratio of ∼ 104 over 115 cycles, showing the potential of this approach for next-generation memristive technology.",

author = "Aferdita Xhameni and Almutairi, \{Abdul Aziz\} and Antonio Lombardo",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 18th IEEE Nanotechnology Materials and Devices Conference, NMDC 2023 ; Conference date: 22-10-2023 Through 25-10-2023",

year = "2023",

doi = "10.1109/NMDC57951.2023.10343949",

language = "English",

series = "2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "529--531",

booktitle = "2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023",

address = "United States",

}

Xhameni, A, Almutairi, AA & Lombardo, A 2023, Oxidation of van-der-Waals Semiconductors for Neuromorphic Technology. in 2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023. 2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023, Institute of Electrical and Electronics Engineers Inc., pp. 529-531, 18th IEEE Nanotechnology Materials and Devices Conference, NMDC 2023, Paestum, Italy, 22/10/23. https://doi.org/10.1109/NMDC57951.2023.10343949

Oxidation of van-der-Waals Semiconductors for Neuromorphic Technology. / Xhameni, Aferdita; Almutairi, Abdul Aziz; Lombardo, Antonio.
2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023. Institute of Electrical and Electronics Engineers Inc., 2023. p. 529-531 (2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Xhameni, Aferdita

AU - Almutairi, Abdul Aziz

AU - Lombardo, Antonio

PY - 2023

Y1 - 2023

N2 - Here, we report novel resistive memories based on oxides obtained by the chemical conversion of a two-dimensional van-der-Waals semiconductor: hafnium disulfide (HfS2). We apply a dry oxidation method, carefully controlling process parameters such as pressure, temperature, and oxygen flow. Hafnium oxides are integrated into crossbar structures, and resistive switching is studied by applying voltage ramps. We demonstrate unipolar switching achieving a RON/R-OFF ratio of ∼ 104 over 115 cycles, showing the potential of this approach for next-generation memristive technology.

AB - Here, we report novel resistive memories based on oxides obtained by the chemical conversion of a two-dimensional van-der-Waals semiconductor: hafnium disulfide (HfS2). We apply a dry oxidation method, carefully controlling process parameters such as pressure, temperature, and oxygen flow. Hafnium oxides are integrated into crossbar structures, and resistive switching is studied by applying voltage ramps. We demonstrate unipolar switching achieving a RON/R-OFF ratio of ∼ 104 over 115 cycles, showing the potential of this approach for next-generation memristive technology.

UR - https://www.scopus.com/pages/publications/85182028965

U2 - 10.1109/NMDC57951.2023.10343949

DO - 10.1109/NMDC57951.2023.10343949

M3 - Conference contribution

AN - SCOPUS:85182028965

T3 - 2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023

SP - 529

EP - 531

BT - 2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 18th IEEE Nanotechnology Materials and Devices Conference, NMDC 2023

Y2 - 22 October 2023 through 25 October 2023

ER -

Oxidation of van-der-Waals Semiconductors for Neuromorphic Technology

Abstract

Publication series

Conference

Bibliographical note

ASJC Scopus subject areas

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