Abstract
We report on the mechanism of emission quenching for InGaN/GaN quantum-disks in nanowires heterostructure grown catalyst-free using plasma-assisted molecular beam epitaxy. Temperature-dependent photoluminescence measurement shows the existence of blue and green emission spectra, with the blue peak quenched at room temperature. Characterization results suggest that the quenching is caused by the presence of stacking faults, strain, and the possibility of point defects in the active region.
| Original language | English |
|---|---|
| Title of host publication | 2015 IEEE Nanotechnology Materials and Devices Conference, NMDC 2015 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (Electronic) | 9781467393621 |
| DOIs | |
| State | Published - 22 Mar 2016 |
Publication series
| Name | 2015 IEEE Nanotechnology Materials and Devices Conference, NMDC 2015 |
|---|
Bibliographical note
Publisher Copyright:© 2015 IEEE.
Keywords
- GaN
- InGaN
- molecular beam epitaxy
- nanowire
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
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