Oriented silicon carbide nanowires: Synthesis and field emission properties

Zhengwei Pan; Hau Ling Lai; Frederick C.K. Au; Xioafeng Duan; Weiya Zhou; Wensheng Shi; Ning Wang; Chun Sing Lee; Ning Biu Wong; Shuit Tong Lee; Sishen Xie

doi:10.1002/1521-4095(200008)12:16<1186::AID-ADMA1186>3.0.CO;2-F

Oriented silicon carbide nanowires: Synthesis and field emission properties

Zhengwei Pan, Hau Ling Lai, Frederick C.K. Au, Xioafeng Duan, Weiya Zhou, Wensheng Shi, Ning Wang, Chun Sing Lee, Ning Biu Wong, Shuit Tong Lee, Sishen Xie

Research output: Contribution to journal › Article › peer-review

508 Scopus citations

Abstract

Oriented SiC nanowires were prepared by reacting aligned carbon nanotubes with SiO at 1400 °C for 2 h. The orientation, diameter, and length of the oriented SiC nanowires were similar to those of the original aligned carbon nanotubes, suggesting that the carbon nanotubes acted as a template to confine the reaction. The field emission properties of the well-oriented nanowires were measured. Field emission current densities of 10 μA/cm² were observed at applied fields of 0.7-1.5 V/μm, and current densities of 10 mA/cm² were realized at applied fields as low as 2.5-3.5 V/μm. The results represent the lowest field ever reported for any field-emitting materials at technologically-useful current densities.

Original language	English
Pages (from-to)	1186-1190
Number of pages	5
Journal	Advanced Materials
Volume	12
Issue number	16
DOIs	https://doi.org/10.1002/1521-4095(200008)12:16<1186::AID-ADMA1186>3.0.CO;2-F
State	Published - 16 Aug 2000
Externally published	Yes

ASJC Scopus subject areas

General Materials Science
Mechanics of Materials
Mechanical Engineering

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10.1002/1521-4095(200008)12:16<1186::AID-ADMA1186>3.0.CO;2-F

Cite this

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title = "Oriented silicon carbide nanowires: Synthesis and field emission properties",

abstract = "Oriented SiC nanowires were prepared by reacting aligned carbon nanotubes with SiO at 1400 °C for 2 h. The orientation, diameter, and length of the oriented SiC nanowires were similar to those of the original aligned carbon nanotubes, suggesting that the carbon nanotubes acted as a template to confine the reaction. The field emission properties of the well-oriented nanowires were measured. Field emission current densities of 10 μA/cm2 were observed at applied fields of 0.7-1.5 V/μm, and current densities of 10 mA/cm2 were realized at applied fields as low as 2.5-3.5 V/μm. The results represent the lowest field ever reported for any field-emitting materials at technologically-useful current densities.",

author = "Zhengwei Pan and Lai, {Hau Ling} and Au, {Frederick C.K.} and Xioafeng Duan and Weiya Zhou and Wensheng Shi and Ning Wang and Lee, {Chun Sing} and Wong, {Ning Biu} and Lee, {Shuit Tong} and Sishen Xie",

year = "2000",

month = aug,

day = "16",

doi = "10.1002/1521-4095(200008)12:16<1186::AID-ADMA1186>3.0.CO;2-F",

language = "English",

volume = "12",

pages = "1186--1190",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-Blackwell",

number = "16",

}

TY - JOUR

T1 - Oriented silicon carbide nanowires

T2 - Synthesis and field emission properties

AU - Pan, Zhengwei

AU - Lai, Hau Ling

AU - Au, Frederick C.K.

AU - Duan, Xioafeng

AU - Zhou, Weiya

AU - Shi, Wensheng

AU - Wang, Ning

AU - Lee, Chun Sing

AU - Wong, Ning Biu

AU - Lee, Shuit Tong

AU - Xie, Sishen

PY - 2000/8/16

Y1 - 2000/8/16

N2 - Oriented SiC nanowires were prepared by reacting aligned carbon nanotubes with SiO at 1400 °C for 2 h. The orientation, diameter, and length of the oriented SiC nanowires were similar to those of the original aligned carbon nanotubes, suggesting that the carbon nanotubes acted as a template to confine the reaction. The field emission properties of the well-oriented nanowires were measured. Field emission current densities of 10 μA/cm2 were observed at applied fields of 0.7-1.5 V/μm, and current densities of 10 mA/cm2 were realized at applied fields as low as 2.5-3.5 V/μm. The results represent the lowest field ever reported for any field-emitting materials at technologically-useful current densities.

AB - Oriented SiC nanowires were prepared by reacting aligned carbon nanotubes with SiO at 1400 °C for 2 h. The orientation, diameter, and length of the oriented SiC nanowires were similar to those of the original aligned carbon nanotubes, suggesting that the carbon nanotubes acted as a template to confine the reaction. The field emission properties of the well-oriented nanowires were measured. Field emission current densities of 10 μA/cm2 were observed at applied fields of 0.7-1.5 V/μm, and current densities of 10 mA/cm2 were realized at applied fields as low as 2.5-3.5 V/μm. The results represent the lowest field ever reported for any field-emitting materials at technologically-useful current densities.

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U2 - 10.1002/1521-4095(200008)12:16<1186::AID-ADMA1186>3.0.CO;2-F

DO - 10.1002/1521-4095(200008)12:16<1186::AID-ADMA1186>3.0.CO;2-F

M3 - Article

AN - SCOPUS:0034247955

SN - 0935-9648

VL - 12

SP - 1186

EP - 1190

JO - Advanced Materials

JF - Advanced Materials

IS - 16

ER -

Oriented silicon carbide nanowires: Synthesis and field emission properties

Abstract

ASJC Scopus subject areas

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