Optical properties of gallium oxide films deposited by electron-beam evaporation

M. F. Al-Kuhaili; S. M.A. Durrani; E. E. Khawaja

doi:10.1063/1.1630845

Optical properties of gallium oxide films deposited by electron-beam evaporation

M. F. Al-Kuhaili^*, S. M.A. Durrani, E. E. Khawaja

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

102 Scopus citations

Abstract

Thin films of Ga₂O₃ were deposited on unheated substrate by electron beam evaporation under different oxygen partial pressures. Both types of films were amorphous. Films prepared with oxygen were stoichiometric and had lower values of n and k, but a higher value of E_g. However, films deposited without oxygen were substoichiometric and had higher values of n and k, but a lower value of E_g.

Original language	English
Pages (from-to)	4533-4535
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	22
DOIs	https://doi.org/10.1063/1.1630845
State	Published - 1 Dec 2003

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{9b8c25f9206a4fcb8d2ac9572199e62d,

title = "Optical properties of gallium oxide films deposited by electron-beam evaporation",

abstract = "Thin films of Ga2O3 were deposited on unheated substrate by electron beam evaporation under different oxygen partial pressures. Both types of films were amorphous. Films prepared with oxygen were stoichiometric and had lower values of n and k, but a higher value of Eg. However, films deposited without oxygen were substoichiometric and had higher values of n and k, but a lower value of Eg.",

author = "Al-Kuhaili, \{M. F.\} and Durrani, \{S. M.A.\} and Khawaja, \{E. E.\}",

year = "2003",

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doi = "10.1063/1.1630845",

language = "English",

volume = "83",

pages = "4533--4535",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - Optical properties of gallium oxide films deposited by electron-beam evaporation

AU - Al-Kuhaili, M. F.

AU - Durrani, S. M.A.

AU - Khawaja, E. E.

PY - 2003/12/1

Y1 - 2003/12/1

N2 - Thin films of Ga2O3 were deposited on unheated substrate by electron beam evaporation under different oxygen partial pressures. Both types of films were amorphous. Films prepared with oxygen were stoichiometric and had lower values of n and k, but a higher value of Eg. However, films deposited without oxygen were substoichiometric and had higher values of n and k, but a lower value of Eg.

AB - Thin films of Ga2O3 were deposited on unheated substrate by electron beam evaporation under different oxygen partial pressures. Both types of films were amorphous. Films prepared with oxygen were stoichiometric and had lower values of n and k, but a higher value of Eg. However, films deposited without oxygen were substoichiometric and had higher values of n and k, but a lower value of Eg.

UR - https://www.scopus.com/pages/publications/0346216006

U2 - 10.1063/1.1630845

DO - 10.1063/1.1630845

M3 - Article

AN - SCOPUS:0346216006

SN - 0003-6951

VL - 83

SP - 4533

EP - 4535

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

ER -

Optical properties of gallium oxide films deposited by electron-beam evaporation

Abstract

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