Optical Confinements in Correlated Spectral Characteristics of Vertically Aligned Silicon Nanometric Wires Followed by a Facile Fabrication Thereof

Nanometric wires, in particular, vertically aligned silicon nanowires, possess a huge prospect in current thin film solar cell technologies. A bottom-up process to acquire vertically aligned silicon nanowire (Si-NW) on c-Si wafer was demonstrated and characterized. A well coverage of Si-NWs on c-Si, ca. 6.5 × 10⁸/cm², was obtained. SEM micrograph confirmed a variation in Si-NW size in length as well as in diameter. On the other hand, inherent optical characteristics of nanometric wires define the performance of such nanowire-based thin film solar cell. Therefore, key factors, such as absorption profile, energy flow, electromagnetic (EM) field, and generation rate distribution in typical model, “Si-NW on c-Si slab,” have been observed at different wavelengths of solar spectrum. A single Si-NW of cylindrical shape was modelled on c-Si and optimized to elucidate the aforementioned characteristics. Light absorption at 700 nm was found to be the best in this scenario, and therefore, EM field and Poynting vector distribution were simulated at the same wavelength. It was revealed that at 700 nm, strongest sites of EM field and energy flow became more available and confined. Exciton generation rate was found to be distributed and confined all the way down to the bottom of the wire. A correlated phenomenon such as optical confinements in spectral characteristics in nanoscale is elucidated. Such a focused prediction in spectral optical characteristics and facile fabrication route is indispensable in optoelectronics as well as nanowire-based advanced electronic design.