Abstract
In this paper, we analyze the lasing characteristics of a chirped InP based InAs quantum dash in a well multi stacked laser structure under different current operation modes. These modes are different short pulsed modes of different duty cycles (0.2, 0.5, 1, 2, 3, and 4%) and continuous wave mode. The investigation is carried out by obtaining the output light power against injection current principle characteristics and then shedding light over the involved physics of carrier transitions and distribution within the active medium. Thereafter, the corresponding emission spectra are obtained while the effects of operation under these modes are compared. The results show that the junction temperature of the laser diode is sensitive to the operation mode due to the excess influx of carriers when the duration of pumping the current into the laser diode is increased, thereby affecting the distribution of carriers across the inhomogeneous quantum dash active region. This change in the non-uniform distribution of carriers, together with junction temperature, resulted in a narrow and red-shifted lasing emission in continuous wave mode compared to pulsed mode. These results will help in achieving high wall plug efficiency devices by proper optimization of quantum dash active region.
| Original language | English |
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| Title of host publication | 2017 9th IEEE-GCC Conference and Exhibition, GCCCE 2017 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (Print) | 9781538627563 |
| DOIs | |
| State | Published - 27 Aug 2018 |
Publication series
| Name | 2017 9th IEEE-GCC Conference and Exhibition, GCCCE 2017 |
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Bibliographical note
Publisher Copyright:© 2017 IEEE.
Keywords
- Braodband laser
- Chirped
- InAs InP
- Inhomogenous structure
- Qquantum dash
- Semi conductor laser
ASJC Scopus subject areas
- Computer Networks and Communications
- Signal Processing
- Information Systems and Management
- Media Technology
- Instrumentation