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One-Pot Preparation of Fe/Cu Catalytic Solution for the Growth of Carbon Nanotubes for Use in Gas Sensor and Field Emission Devices

  • Mohd Sarvar
  • , Mohammad Moeen Hasan Raza
  • , Shah Masheerul Aalam
  • , Mohd Sadiq
  • , Mohd Shahid Khan
  • , Javid Ali*
  • *Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Carbon nanotubes have a large surface area and are porous in nature so they can be highly useful in gas sensing and field emission applications. CNT have advanced electrical properties due to π-π conjugated configuration. In this present work, we have prepared the Fe catalyst and Fe/Cu catalyst via a chemical route. CNTs were synthesized on Fe and Fe/Cu coated silicon substrates using the low-pressure CVD at different gas flow ratios. The growth of CNTs was performed at 700 ℃ temperature by feeding the acetylene gas along with hydrogen as a carrier gas. The growth of CNTs completed in 25 min. Ammonia is a poisonous gas that is renowned as a silent killer. Long-term ammonia gas exposure damages the sensory tissue and promotes headaches. In this work, we study the gas sensing and field emission properties of the as-prepared CNTs in the presence of ammonia gas. The as-prepared samples were characterized by several techniques like scanning electron microscope (SEM) for morphology analysis, Raman spectroscopy to analyse signature peaks and quality of the as-prepared samples. The role of ammonia gas in gas sensing and the change in electronic characteristics in the presence of ammonia gas are being investigated.

Original languageEnglish
Title of host publicationThe Physics of Semiconductor Devices - Proceedings of IWPSD 2021
EditorsRajendra Singh, Madhusudan Singh, Ashok Kapoor
PublisherSpringer Science and Business Media Deutschland GmbH
Pages403-410
Number of pages8
ISBN (Print)9789819715701
DOIs
StatePublished - 2024
Externally publishedYes
Event21st International Workshop on the Physics of Semiconductor Devices, IWPSD 2021 - New Delhi, India
Duration: 14 Dec 202117 Dec 2021

Publication series

NameSpringer Proceedings in Physics
Volume306
ISSN (Print)0930-8989
ISSN (Electronic)1867-4941

Conference

Conference21st International Workshop on the Physics of Semiconductor Devices, IWPSD 2021
Country/TerritoryIndia
CityNew Delhi
Period14/12/2117/12/21

Bibliographical note

Publisher Copyright:
© The Author(s), under exclusive license to Springer Nature Singapore Pte Ltd. 2024.

Keywords

  • FESEM
  • Field emitter
  • Gas sensing
  • LPCVD
  • MWCNTs
  • Raman

ASJC Scopus subject areas

  • General Physics and Astronomy

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