Abstract
It is demonstrated that a multilayer structure of Ge quantum dots deposited on Si spacer layers in the intrinsic region of a Si p-i-n diode exhibits a strong photovoltaic response in the infrared region. A Ge/Si active layer with a total thickness of 300 nm is found to provide an open-circuit voltage of about 0.6 V and short-circuit current of 24 mA cm-2 corresponding to an energy conversion efficiency of 11.5%.
| Original language | English |
|---|---|
| Pages (from-to) | 863-866 |
| Number of pages | 4 |
| Journal | Scripta Materialia |
| Volume | 65 |
| Issue number | 10 |
| DOIs | |
| State | Published - Nov 2011 |
Bibliographical note
Funding Information:It is a pleasure to acknowledge the support of King Abdulaziz City for Science & Technology, Riyadh, Saudi Arabia through project AR-28-043. The continued support of King Fahd University of Petroleum & Minerals is also appreciated. The growth of the active layer was contracted by the Institut d’Electronique Foundamentale, Universite Paris-Sud, France (UMR CNRS no.8622).
Keywords
- AFM
- Chemical vapor deposition
- Nanostructured materials
- SEM
- STEM
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
- Metals and Alloys
