ON THE CONDUCTION MECHANISM OF Mn/SiO THIN CERMET FILMS USING THE VAN DER PAUW TECHNIQUE.

C. Mosiun; J. Beynon; W. Fulop; C. A. Hogarth

doi:10.1080/00207218308938706

ON THE CONDUCTION MECHANISM OF Mn/SiO THIN CERMET FILMS USING THE VAN DER PAUW TECHNIQUE.

C. Mosiun^*, J. Beynon, W. Fulop, C. A. Hogarth

^*Corresponding author for this work

King Fahd University of Petroleum & Minerals

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The van der Pauw technique has been used to measure the conductivity and the Hall constant of Mn/SiO thin cermet films prepared by single boat evaporation at 10** minus **5 torr. The activation energy for conduction of unannealed and annealed cermets is a few Mev and the Hall constant lies between plus 0. 05 and plus 0. 005 cm**3 C** minus **1. The hole mobility is estimated to be 4 cm**2 V** minus **1 s** minus **1 and the carrier density is approximately 10**2**1 cm** minus **3.

Original language	English
Pages (from-to)	167-168
Number of pages	2
Journal	International Journal of Electronics
Volume	54
Issue number	1
DOIs	https://doi.org/10.1080/00207218308938706
State	Published - 1983

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1080/00207218308938706

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title = "ON THE CONDUCTION MECHANISM OF Mn/SiO THIN CERMET FILMS USING THE VAN DER PAUW TECHNIQUE.",

abstract = "The van der Pauw technique has been used to measure the conductivity and the Hall constant of Mn/SiO thin cermet films prepared by single boat evaporation at 10** minus **5 torr. The activation energy for conduction of unannealed and annealed cermets is a few Mev and the Hall constant lies between plus 0. 05 and plus 0. 005 cm**3 C** minus **1. The hole mobility is estimated to be 4 cm**2 V** minus **1 s** minus **1 and the carrier density is approximately 10**2**1 cm** minus **3.",

author = "C. Mosiun and J. Beynon and W. Fulop and Hogarth, \{C. A.\}",

year = "1983",

doi = "10.1080/00207218308938706",

language = "English",

volume = "54",

pages = "167--168",

journal = "International Journal of Electronics",

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T1 - ON THE CONDUCTION MECHANISM OF Mn/SiO THIN CERMET FILMS USING THE VAN DER PAUW TECHNIQUE.

AU - Mosiun, C.

AU - Beynon, J.

AU - Fulop, W.

AU - Hogarth, C. A.

PY - 1983

Y1 - 1983

N2 - The van der Pauw technique has been used to measure the conductivity and the Hall constant of Mn/SiO thin cermet films prepared by single boat evaporation at 10** minus **5 torr. The activation energy for conduction of unannealed and annealed cermets is a few Mev and the Hall constant lies between plus 0. 05 and plus 0. 005 cm**3 C** minus **1. The hole mobility is estimated to be 4 cm**2 V** minus **1 s** minus **1 and the carrier density is approximately 10**2**1 cm** minus **3.

AB - The van der Pauw technique has been used to measure the conductivity and the Hall constant of Mn/SiO thin cermet films prepared by single boat evaporation at 10** minus **5 torr. The activation energy for conduction of unannealed and annealed cermets is a few Mev and the Hall constant lies between plus 0. 05 and plus 0. 005 cm**3 C** minus **1. The hole mobility is estimated to be 4 cm**2 V** minus **1 s** minus **1 and the carrier density is approximately 10**2**1 cm** minus **3.

UR - https://www.scopus.com/pages/publications/0020595957

U2 - 10.1080/00207218308938706

DO - 10.1080/00207218308938706

M3 - Article

AN - SCOPUS:0020595957

SN - 0020-7217

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EP - 168

JO - International Journal of Electronics

JF - International Journal of Electronics

IS - 1

ER -

ON THE CONDUCTION MECHANISM OF Mn/SiO THIN CERMET FILMS USING THE VAN DER PAUW TECHNIQUE.

Abstract

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