Numerically investigating the cause of broadband lasing from InAs/InP quantum-dash laser

  • M. Z.M. Khan
  • , Tien K. Ng
  • , Boon S. Ooi*
  • *Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The authors numerically investigated the origin of broadband lasing from multi-stack InAs/InP quantum dash (Qdash) laser. For this a model based on multi-population carrier-photon rate equation is developed which treats each Qdash stacking layer separately. In addition, the coupling between the adjacent stacks is also accounted in the model apart from the inhomogeneous broadening due to dash size or composition fluctuation. Simulation results show that the effect of Qdash inhomogeneity on a single plane (in-plane or localized inhomogeneity) is negligible in broadening the lasing spectra compared to the inhomogeneity across the stacks that are emitting at different wavelength. Our results would help in further optimizing the wafer structure design and improve the lasing bandwidth.

Original languageEnglish
Title of host publication2013 Saudi International Electronics, Communications and Photonics Conference, SIECPC 2013
DOIs
StatePublished - 2013
Externally publishedYes

Publication series

Name2013 Saudi International Electronics, Communications and Photonics Conference, SIECPC 2013

Keywords

  • Quantum dash laser
  • broadband lasers
  • chirped barrier
  • rate equation model

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering

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