Numerical investigations on efficient Rb-doped CsPbIBr₂-based inorganic perovskite solar cells with effectual hole transport layer optimization

This investigation divulges the significance of rubidium (Rb)-doped perovskite (PVT)-based solar cells (PSCs) through numerical validation of FTO/SnO₂/CsPbIBr₂/HTL/Au with respect to thickness, radiative recombination coefficient, acceptor density, interfacial defect density, and charge carrier cross-sections of PVT layer against its pristine version. Further, the research explores optimal hole transport layer (HTL) choices using novel delofossite oxide (CuAlO₂) against conventional nickel oxide (NiO) in terms device behavior of Rb-doped PSC and its undoped equivalent. The simulation results imply that Rb-doped PSCs irrespective of HTLs produce their highest device yield of 16.30 % at a least electron capture cross-section of 4 × 10^-15 cm². The study further observed a steady appreciable performance characteristics from Rb-doped PSCs regardless of the HTL material employed. Instead, for pristine PSCs, contribution of HTL optimization is recognized to be a prevalent attribute. The investigation will possibly open the door for further design optimization on account of appropriate PVT doping besides HTL optimization.