Numerical analysis of the temperature effects on single junction solar cells efficiencies

Mohammad I. Hossain; Abdelkader Bousselham; Fahhad H. Alharbi

doi:10.1109/PVSC.2013.6744264

Numerical analysis of the temperature effects on single junction solar cells efficiencies

Mohammad I. Hossain
, Abdelkader Bousselham
, Fahhad H. Alharbi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

A numerical analysis of the temperature effects on single-junction solar cells efficiencies is presented. In this work the temperature effects are included both explicitly in the input empirical parameters such as the mobility, carrier concentration, affinity energy, etc. and implicitly considered in the governing physics. The semiconductors used in this study are Si, GaAs, and CdTe, and the temperature range were chosen to be in the range from 300 K to 350 K to mimic realistic operation range. For the Si cell, the efficiency dropped from 25.84% at room temperature to around 20.95% at 350 K, for GaAS cell from 28.01% to 23.95%, and for CdTe from 18.87% to 17.20%. Quantitatively CdTe cells are less affected by temperature change compared to Si and GaAs Cells; but, within the used range, still Si and GaAs cells are more efficient than CdTe.

Original language	English
Title of host publication	39th IEEE Photovoltaic Specialists Conference, PVSC 2013
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	779-781
Number of pages	3
ISBN (Print)	9781479932993
DOIs	https://doi.org/10.1109/PVSC.2013.6744264
State	Published - 2013
Externally published	Yes

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

SCAPS
Solar cell simulation
Solar cells
Temperature effects

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/PVSC.2013.6744264

Cite this

Hossain, M. I., Bousselham, A., & Alharbi, F. H. (2013). Numerical analysis of the temperature effects on single junction solar cells efficiencies. In 39th IEEE Photovoltaic Specialists Conference, PVSC 2013 (pp. 779-781). Article 6744264 (Conference Record of the IEEE Photovoltaic Specialists Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2013.6744264

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title = "Numerical analysis of the temperature effects on single junction solar cells efficiencies",

abstract = "A numerical analysis of the temperature effects on single-junction solar cells efficiencies is presented. In this work the temperature effects are included both explicitly in the input empirical parameters such as the mobility, carrier concentration, affinity energy, etc. and implicitly considered in the governing physics. The semiconductors used in this study are Si, GaAs, and CdTe, and the temperature range were chosen to be in the range from 300 K to 350 K to mimic realistic operation range. For the Si cell, the efficiency dropped from 25.84\% at room temperature to around 20.95\% at 350 K, for GaAS cell from 28.01\% to 23.95\%, and for CdTe from 18.87\% to 17.20\%. Quantitatively CdTe cells are less affected by temperature change compared to Si and GaAs Cells; but, within the used range, still Si and GaAs cells are more efficient than CdTe.",

keywords = "SCAPS, Solar cell simulation, Solar cells, Temperature effects",

author = "Hossain, \{Mohammad I.\} and Abdelkader Bousselham and Alharbi, \{Fahhad H.\}",

year = "2013",

doi = "10.1109/PVSC.2013.6744264",

language = "English",

isbn = "9781479932993",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "779--781",

booktitle = "39th IEEE Photovoltaic Specialists Conference, PVSC 2013",

address = "United States",

}

Hossain, MI, Bousselham, A & Alharbi, FH 2013, Numerical analysis of the temperature effects on single junction solar cells efficiencies. in 39th IEEE Photovoltaic Specialists Conference, PVSC 2013., 6744264, Conference Record of the IEEE Photovoltaic Specialists Conference, Institute of Electrical and Electronics Engineers Inc., pp. 779-781. https://doi.org/10.1109/PVSC.2013.6744264

Numerical analysis of the temperature effects on single junction solar cells efficiencies. / Hossain, Mohammad I.; Bousselham, Abdelkader; Alharbi, Fahhad H.
39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc., 2013. p. 779-781 6744264 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Numerical analysis of the temperature effects on single junction solar cells efficiencies

AU - Hossain, Mohammad I.

AU - Bousselham, Abdelkader

AU - Alharbi, Fahhad H.

PY - 2013

Y1 - 2013

N2 - A numerical analysis of the temperature effects on single-junction solar cells efficiencies is presented. In this work the temperature effects are included both explicitly in the input empirical parameters such as the mobility, carrier concentration, affinity energy, etc. and implicitly considered in the governing physics. The semiconductors used in this study are Si, GaAs, and CdTe, and the temperature range were chosen to be in the range from 300 K to 350 K to mimic realistic operation range. For the Si cell, the efficiency dropped from 25.84% at room temperature to around 20.95% at 350 K, for GaAS cell from 28.01% to 23.95%, and for CdTe from 18.87% to 17.20%. Quantitatively CdTe cells are less affected by temperature change compared to Si and GaAs Cells; but, within the used range, still Si and GaAs cells are more efficient than CdTe.

AB - A numerical analysis of the temperature effects on single-junction solar cells efficiencies is presented. In this work the temperature effects are included both explicitly in the input empirical parameters such as the mobility, carrier concentration, affinity energy, etc. and implicitly considered in the governing physics. The semiconductors used in this study are Si, GaAs, and CdTe, and the temperature range were chosen to be in the range from 300 K to 350 K to mimic realistic operation range. For the Si cell, the efficiency dropped from 25.84% at room temperature to around 20.95% at 350 K, for GaAS cell from 28.01% to 23.95%, and for CdTe from 18.87% to 17.20%. Quantitatively CdTe cells are less affected by temperature change compared to Si and GaAs Cells; but, within the used range, still Si and GaAs cells are more efficient than CdTe.

KW - SCAPS

KW - Solar cell simulation

KW - Solar cells

KW - Temperature effects

UR - https://www.scopus.com/pages/publications/84896471295

U2 - 10.1109/PVSC.2013.6744264

DO - 10.1109/PVSC.2013.6744264

M3 - Conference contribution

AN - SCOPUS:84896471295

SN - 9781479932993

T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

SP - 779

EP - 781

BT - 39th IEEE Photovoltaic Specialists Conference, PVSC 2013

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Hossain MI, Bousselham A, Alharbi FH. Numerical analysis of the temperature effects on single junction solar cells efficiencies. In 39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc. 2013. p. 779-781. 6744264. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC.2013.6744264

Numerical analysis of the temperature effects on single junction solar cells efficiencies

Abstract

Publication series

UN SDGs

Keywords

ASJC Scopus subject areas

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Cite this