Nonballistic spin-field-effect transistor

John Schliemann; J. Carlos Egues; Daniel Loss

Nonballistic spin-field-effect transistor

John Schliemann^*
, J. Carlos Egues
, Daniel Loss

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

676 Scopus citations

Abstract

A modified version of the spin-FET in which electrons are not only subject to spin-orbit interaction of the Rashba but also of the Dresselhaus type is presented. The device is shown to be robust against spin-independent scattering and hence can also operate in a nonballistic (or diffusive) regime.

Original language	English
Article number	146801
Pages (from-to)	146801/1-146801/4
Journal	Physical Review Letters
Volume	90
Issue number	14
State	Published - 11 Apr 2003

ASJC Scopus subject areas

General Physics and Astronomy

Cite this

@article{86beba85b530487193709c0cdc1e18ff,

title = "Nonballistic spin-field-effect transistor",

abstract = "A modified version of the spin-FET in which electrons are not only subject to spin-orbit interaction of the Rashba but also of the Dresselhaus type is presented. The device is shown to be robust against spin-independent scattering and hence can also operate in a nonballistic (or diffusive) regime.",

author = "John Schliemann and Egues, \{J. Carlos\} and Daniel Loss",

year = "2003",

month = apr,

day = "11",

language = "English",

volume = "90",

pages = "146801/1--146801/4",

journal = "Physical Review Letters",

issn = "0031-9007",

publisher = "American Physical Society",

number = "14",

}

TY - JOUR

T1 - Nonballistic spin-field-effect transistor

AU - Schliemann, John

AU - Egues, J. Carlos

AU - Loss, Daniel

PY - 2003/4/11

Y1 - 2003/4/11

N2 - A modified version of the spin-FET in which electrons are not only subject to spin-orbit interaction of the Rashba but also of the Dresselhaus type is presented. The device is shown to be robust against spin-independent scattering and hence can also operate in a nonballistic (or diffusive) regime.

AB - A modified version of the spin-FET in which electrons are not only subject to spin-orbit interaction of the Rashba but also of the Dresselhaus type is presented. The device is shown to be robust against spin-independent scattering and hence can also operate in a nonballistic (or diffusive) regime.

UR - https://www.scopus.com/pages/publications/0038541874

M3 - Article

AN - SCOPUS:0038541874

SN - 0031-9007

VL - 90

SP - 146801/1-146801/4

JO - Physical Review Letters

JF - Physical Review Letters

IS - 14

M1 - 146801

ER -

Nonballistic spin-field-effect transistor

Abstract

ASJC Scopus subject areas

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