New fault models and efficient BIST algorithms for dual-port memories

Alaaeldin A. Amin; Mohamed Y. Osman; Radwan E. Abdel-Aal; Husni Al-Muhtaseb; A. A. Amin; M. Y. Osman

doi:10.1109/43.658567

New fault models and efficient BIST algorithms for dual-port memories

Alaaeldin A. Amin^*, Mohamed Y. Osman, Radwan E. Abdel-Aal, Husni Al-Muhtaseb, A. A. Amin^*, M. Y. Osman

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The testability problem of dual-port memories is investigated. A functional model is defined, and architectural modifications to enhance the testability of such chips are described. These modifications allow multiple access of memory cells for increased test speed with minimal overhead on both silicon area and device performance. New fault models are proposed, and efficient O(√n) test algorithms are described for both the memory array and the address decoders. The new fault models account for the simultaneous dual-access property of the device. In addition to the classical static neighborhood pattern-sensitive faults, the array test algorithm covers a new class of pattern sensitive faults, duplex dynamic neighborhood pattern-sensitive faults (DDNPSF).

Original language	English
Pages (from-to)	987-1000
Number of pages	14
Journal	IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Volume	16
Issue number	9
DOIs	https://doi.org/10.1109/43.658567
State	Published - 1997

Bibliographical note

Funding Information:
Manuscript received January 6, 1995; revised April 9, 1997. This work was supported by KFUPM. This paper was recommended by Associate Editor W. Maly. A. A. Amin and M. Y. Osman are with the Department of Computer Engineering, King Fahd University of Petroleum & Minerals, Dhahran 31261, Saudi Arabia. R. E. Abdel-Aal is with the Energy Research Laboratory, Research Institute, King Fahd University of Petroleum & Minerals, Dhahran 31261, Saudi Arabia. H. Al-Muhtaseb is with the Department of Information and Computer Science, King Fahd University of Petroleum & Minerals, Dhahran 31261, Saudi Arabia. Publisher Item Identifier S 0278-0070(97)09007-6.

Keywords

Address decoder faults
Built-in self-test (bist)
Cross-port decoder faults
Design for testability
Duplex dynamic neighborhood pattern-sensitive faults

ASJC Scopus subject areas

Software
Computer Graphics and Computer-Aided Design
Electrical and Electronic Engineering

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title = "New fault models and efficient BIST algorithms for dual-port memories",

abstract = "The testability problem of dual-port memories is investigated. A functional model is defined, and architectural modifications to enhance the testability of such chips are described. These modifications allow multiple access of memory cells for increased test speed with minimal overhead on both silicon area and device performance. New fault models are proposed, and efficient O(√n) test algorithms are described for both the memory array and the address decoders. The new fault models account for the simultaneous dual-access property of the device. In addition to the classical static neighborhood pattern-sensitive faults, the array test algorithm covers a new class of pattern sensitive faults, duplex dynamic neighborhood pattern-sensitive faults (DDNPSF).",

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note = "Funding Information: Manuscript received January 6, 1995; revised April 9, 1997. This work was supported by KFUPM. This paper was recommended by Associate Editor W. Maly. A. A. Amin and M. Y. Osman are with the Department of Computer Engineering, King Fahd University of Petroleum & Minerals, Dhahran 31261, Saudi Arabia. R. E. Abdel-Aal is with the Energy Research Laboratory, Research Institute, King Fahd University of Petroleum & Minerals, Dhahran 31261, Saudi Arabia. H. Al-Muhtaseb is with the Department of Information and Computer Science, King Fahd University of Petroleum & Minerals, Dhahran 31261, Saudi Arabia. Publisher Item Identifier S 0278-0070(97)09007-6.",

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New fault models and efficient BIST algorithms for dual-port memories

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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