Negative differential resistance in planar graphene quantum dot resonant tunneling diodes

Feras Al-Dirini; Mahmood A. Mohammed; Liming Jiang; Md Sharafat Hossain; Babak Nasr; Faruque Hossain; Ampalavanapillai Nirmalathas; Efstratios Skafidas

doi:10.1109/NANO.2017.8117476

Negative differential resistance in planar graphene quantum dot resonant tunneling diodes

Feras Al-Dirini, Mahmood A. Mohammed, Liming Jiang, Md Sharafat Hossain, Babak Nasr, Faruque Hossain, Ampalavanapillai Nirmalathas, Efstratios Skafidas

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Negative differential resistance (NDR), an electronic property present in resonant tunneling diodes, enables high performance terahertz frequency oscillators and multi-state logic and memory devices. An important measure of NDR is the peak-to-valley current ratio (PVCR) and this has been extremely lacking in solid-state NDR devices. Here we show how a dimensional mismatch between the quantum dot and the electrodes of a planar graphene Double Barrier Resonant Tunneling Diode (DB-RTD) greatly enhances the PVCR of the device up to a ratio of 10³. Our findings suggest a promising future for the application of planar graphene quantum dot devices in next generation electronics.

Original language	English
Title of host publication	2017 IEEE 17th International Conference on Nanotechnology, NANO 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	965-968
Number of pages	4
ISBN (Electronic)	9781509030286
DOIs	https://doi.org/10.1109/NANO.2017.8117476
State	Published - 21 Nov 2017
Externally published	Yes

Publication series

Name	2017 IEEE 17th International Conference on Nanotechnology, NANO 2017

Bibliographical note

Publisher Copyright:
© 2017 IEEE.

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces, Coatings and Films
Electrical and Electronic Engineering

Access to Document

10.1109/NANO.2017.8117476

Cite this

Al-Dirini, F., Mohammed, M. A., Jiang, L., Hossain, M. S., Nasr, B., Hossain, F., Nirmalathas, A., & Skafidas, E. (2017). Negative differential resistance in planar graphene quantum dot resonant tunneling diodes. In 2017 IEEE 17th International Conference on Nanotechnology, NANO 2017 (pp. 965-968). Article 8117476 (2017 IEEE 17th International Conference on Nanotechnology, NANO 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NANO.2017.8117476

Al-Dirini, Feras ; Mohammed, Mahmood A. ; Jiang, Liming et al. / Negative differential resistance in planar graphene quantum dot resonant tunneling diodes. 2017 IEEE 17th International Conference on Nanotechnology, NANO 2017. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 965-968 (2017 IEEE 17th International Conference on Nanotechnology, NANO 2017).

@inproceedings{30f0b05492454edba8c2263f71c71d12,

title = "Negative differential resistance in planar graphene quantum dot resonant tunneling diodes",

abstract = "Negative differential resistance (NDR), an electronic property present in resonant tunneling diodes, enables high performance terahertz frequency oscillators and multi-state logic and memory devices. An important measure of NDR is the peak-to-valley current ratio (PVCR) and this has been extremely lacking in solid-state NDR devices. Here we show how a dimensional mismatch between the quantum dot and the electrodes of a planar graphene Double Barrier Resonant Tunneling Diode (DB-RTD) greatly enhances the PVCR of the device up to a ratio of 103. Our findings suggest a promising future for the application of planar graphene quantum dot devices in next generation electronics.",

author = "Feras Al-Dirini and Mohammed, {Mahmood A.} and Liming Jiang and Hossain, {Md Sharafat} and Babak Nasr and Faruque Hossain and Ampalavanapillai Nirmalathas and Efstratios Skafidas",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.",

year = "2017",

month = nov,

day = "21",

doi = "10.1109/NANO.2017.8117476",

language = "English",

series = "2017 IEEE 17th International Conference on Nanotechnology, NANO 2017",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "965--968",

booktitle = "2017 IEEE 17th International Conference on Nanotechnology, NANO 2017",

address = "United States",

}

Al-Dirini, F, Mohammed, MA, Jiang, L, Hossain, MS, Nasr, B, Hossain, F, Nirmalathas, A & Skafidas, E 2017, Negative differential resistance in planar graphene quantum dot resonant tunneling diodes. in 2017 IEEE 17th International Conference on Nanotechnology, NANO 2017., 8117476, 2017 IEEE 17th International Conference on Nanotechnology, NANO 2017, Institute of Electrical and Electronics Engineers Inc., pp. 965-968. https://doi.org/10.1109/NANO.2017.8117476

Negative differential resistance in planar graphene quantum dot resonant tunneling diodes. / Al-Dirini, Feras; Mohammed, Mahmood A.; Jiang, Liming et al.
2017 IEEE 17th International Conference on Nanotechnology, NANO 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 965-968 8117476 (2017 IEEE 17th International Conference on Nanotechnology, NANO 2017).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Negative differential resistance in planar graphene quantum dot resonant tunneling diodes

AU - Al-Dirini, Feras

AU - Mohammed, Mahmood A.

AU - Jiang, Liming

AU - Hossain, Md Sharafat

AU - Nasr, Babak

AU - Hossain, Faruque

AU - Nirmalathas, Ampalavanapillai

AU - Skafidas, Efstratios

PY - 2017/11/21

Y1 - 2017/11/21

N2 - Negative differential resistance (NDR), an electronic property present in resonant tunneling diodes, enables high performance terahertz frequency oscillators and multi-state logic and memory devices. An important measure of NDR is the peak-to-valley current ratio (PVCR) and this has been extremely lacking in solid-state NDR devices. Here we show how a dimensional mismatch between the quantum dot and the electrodes of a planar graphene Double Barrier Resonant Tunneling Diode (DB-RTD) greatly enhances the PVCR of the device up to a ratio of 103. Our findings suggest a promising future for the application of planar graphene quantum dot devices in next generation electronics.

AB - Negative differential resistance (NDR), an electronic property present in resonant tunneling diodes, enables high performance terahertz frequency oscillators and multi-state logic and memory devices. An important measure of NDR is the peak-to-valley current ratio (PVCR) and this has been extremely lacking in solid-state NDR devices. Here we show how a dimensional mismatch between the quantum dot and the electrodes of a planar graphene Double Barrier Resonant Tunneling Diode (DB-RTD) greatly enhances the PVCR of the device up to a ratio of 103. Our findings suggest a promising future for the application of planar graphene quantum dot devices in next generation electronics.

UR - http://www.scopus.com/inward/record.url?scp=85041240345&partnerID=8YFLogxK

U2 - 10.1109/NANO.2017.8117476

DO - 10.1109/NANO.2017.8117476

M3 - Conference contribution

AN - SCOPUS:85041240345

T3 - 2017 IEEE 17th International Conference on Nanotechnology, NANO 2017

SP - 965

EP - 968

BT - 2017 IEEE 17th International Conference on Nanotechnology, NANO 2017

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Al-Dirini F, Mohammed MA, Jiang L, Hossain MS, Nasr B, Hossain F et al. Negative differential resistance in planar graphene quantum dot resonant tunneling diodes. In 2017 IEEE 17th International Conference on Nanotechnology, NANO 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 965-968. 8117476. (2017 IEEE 17th International Conference on Nanotechnology, NANO 2017). doi: 10.1109/NANO.2017.8117476

Negative differential resistance in planar graphene quantum dot resonant tunneling diodes

Abstract

Publication series

Bibliographical note

ASJC Scopus subject areas

Access to Document

Fingerprint

Cite this