Nano FIBrication OF ultra high aspect ratio vias in silicon

Drew Goettler, Mehmet Su, Roy Olsson, D. Bruce Burckel, Ihab El-Kady, Zayd Leseman

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this paper we present both experimental and theoretical results showing the effective use of material shaping to fabricate ultra-high-Aspect-ratio (UHAR) vias with a focused ion beam (FIB). With this technique, one can create vias with aspect ratios of 20:1 and higher. This is achieved by placing a 'lower sputter rate' material on top of a 'higher sputter rate' material. We model the FIB as a Gaussian beam with an angular dependent sputter rate. With our model we predict a high sputter rate ratio (high/low) can achieve vias with aspect ratios near 20:1. Experimental results support this prediction. By placing a thin layer of pyrolyzed carbon on top of silicon, we fabricated UHAR vias with diameters of 75 nm.

Original languageEnglish
Title of host publicationASME 2010 International Mechanical Engineering Congress and Exposition, IMECE 2010
PublisherAmerican Society of Mechanical Engineers (ASME)
Pages561-564
Number of pages4
ISBN (Print)9780791844472
DOIs
StatePublished - 2010
Externally publishedYes
EventASME 2010 International Mechanical Engineering Congress and Exposition, IMECE 2010 - Vancouver, BC, Canada
Duration: 12 Nov 201018 Nov 2010

Publication series

NameASME International Mechanical Engineering Congress and Exposition, Proceedings (IMECE)
Volume10

Conference

ConferenceASME 2010 International Mechanical Engineering Congress and Exposition, IMECE 2010
Country/TerritoryCanada
CityVancouver, BC
Period12/11/1018/11/10

ASJC Scopus subject areas

  • Mechanical Engineering

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