Abstract
Mg3Sb2-based alloys are competitive alternatives to the state of-the-art n-type Bi2(Te,Se)3 thermoelectric materials and have been under discussion for the last several years due to their high zT values. However, the poor performance of pure p-type Mg3Sb2 due to its poor electrical conductivity is an obstacle for advanced applications. Here the thermoelectric figure of merit is improved by reducing the thermal conductivity of the material produced through high-energy ball milling, without deteriorating other properties. The thermoelectric performance of Mg3Sb2-based material is optimized by substituting Te on the Sb site through Bi and Te co-doping in Mg3.2Sb1.5-0.5xBi0.5Tex with various Te concentrations and the figure of merit is improved from 0.9 to ~ 1.5 at 700 K. The variation in Te concentration has a significant impact on the structural and morphological properties of the material. The density functional theory was employed for the confirmation of the extramental results. This study proposes an efficient route to enhance the thermoelectric performance of n-type Mg3Sb2 via Bi and Te co-doping, for future applications of Mg3Sb2 based thermoelectric materials.
| Original language | English |
|---|---|
| Journal | Journal of Materials Engineering and Performance |
| DOIs | |
| State | Accepted/In press - 2025 |
Bibliographical note
Publisher Copyright:© ASM International 2025.
Keywords
- co-doping
- electronic structure
- MgSb
- thermoelectric
- zT
ASJC Scopus subject areas
- General Materials Science
- Mechanics of Materials
- Mechanical Engineering
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