Abstract
A mutual ferromagnetic and ferroelectric coupling (multiferroic behavior) in Cu-doped ZnO is demonstrated via deterministic control of Cu doping and defect engineering. The coexistence of multivalence Cu ions and oxygen vacancies is important to multiferroic behaviors in ZnO:Cu. The samples show clear ferroelectric and ferromagnetic domain patterns. These domain structures may be written reversibly via electric and magnetic bias.
| Original language | English |
|---|---|
| Pages (from-to) | 1635-1640 |
| Number of pages | 6 |
| Journal | Advanced Materials |
| Volume | 23 |
| Issue number | 14 |
| DOIs | |
| State | Published - 12 Apr 2011 |
| Externally published | Yes |
Keywords
- ferroelectric materials
- magnetic materials
- multiferroic materials
- thin films
- zinc oxide
ASJC Scopus subject areas
- General Materials Science
- Mechanics of Materials
- Mechanical Engineering