Mott-schottky analysis of passive films on Si containing stainless steel alloys

Ihsan Ul Haq Toor

doi:10.1149/2.083111jes

Mott-schottky analysis of passive films on Si containing stainless steel alloys

Ihsan Ul Haq Toor^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

55 Scopus citations

Abstract

Effect of silicon on the defect density of Fe-20Cr-xSi (x 0, 1, 2) stainless steel alloys was investigated in deaerated pH 8.5 borate buffer solution at room temperature using Mott-Schottky analysis. Results showed that silicon was incorporateddissolved in the passive film of Fe-20Cr-xSi (x 0, 1, 2) alloys. Mott-Schottky analysis revealed that the addition of silicon decreased the acceptor density (N_A, V_Cr^-3), i.e., increased the Cr³ content of the passive film. Also the donor densities, shallow donor (N_D1, V_O²) and deep donor (N_D2, V_Cr⁶), of the passive films formed were decreased. XPS analysis confirmed the presence of Si in the passive film of Si containing alloys. This enriched silicon along with higher Cr³ concentration of the passive film, dictated its enhanced protectiveness and stability.

Original language	English
Pages (from-to)	C391-C395
Journal	Journal of the Electrochemical Society
Volume	158
Issue number	11
DOIs	https://doi.org/10.1149/2.083111jes
State	Published - 2011

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

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@article{6a641b03b4834a37b3a2dc769212a671,

title = "Mott-schottky analysis of passive films on Si containing stainless steel alloys",

abstract = "Effect of silicon on the defect density of Fe-20Cr-xSi (x 0, 1, 2) stainless steel alloys was investigated in deaerated pH 8.5 borate buffer solution at room temperature using Mott-Schottky analysis. Results showed that silicon was incorporateddissolved in the passive film of Fe-20Cr-xSi (x 0, 1, 2) alloys. Mott-Schottky analysis revealed that the addition of silicon decreased the acceptor density (NA, VCr-3), i.e., increased the Cr3 content of the passive film. Also the donor densities, shallow donor (ND1, VO2) and deep donor (ND2, VCr6), of the passive films formed were decreased. XPS analysis confirmed the presence of Si in the passive film of Si containing alloys. This enriched silicon along with higher Cr3 concentration of the passive film, dictated its enhanced protectiveness and stability.",

author = "Toor, \{Ihsan Ul Haq\}",

year = "2011",

doi = "10.1149/2.083111jes",

language = "English",

volume = "158",

pages = "C391--C395",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

number = "11",

}

TY - JOUR

T1 - Mott-schottky analysis of passive films on Si containing stainless steel alloys

AU - Toor, Ihsan Ul Haq

PY - 2011

Y1 - 2011

N2 - Effect of silicon on the defect density of Fe-20Cr-xSi (x 0, 1, 2) stainless steel alloys was investigated in deaerated pH 8.5 borate buffer solution at room temperature using Mott-Schottky analysis. Results showed that silicon was incorporateddissolved in the passive film of Fe-20Cr-xSi (x 0, 1, 2) alloys. Mott-Schottky analysis revealed that the addition of silicon decreased the acceptor density (NA, VCr-3), i.e., increased the Cr3 content of the passive film. Also the donor densities, shallow donor (ND1, VO2) and deep donor (ND2, VCr6), of the passive films formed were decreased. XPS analysis confirmed the presence of Si in the passive film of Si containing alloys. This enriched silicon along with higher Cr3 concentration of the passive film, dictated its enhanced protectiveness and stability.

AB - Effect of silicon on the defect density of Fe-20Cr-xSi (x 0, 1, 2) stainless steel alloys was investigated in deaerated pH 8.5 borate buffer solution at room temperature using Mott-Schottky analysis. Results showed that silicon was incorporateddissolved in the passive film of Fe-20Cr-xSi (x 0, 1, 2) alloys. Mott-Schottky analysis revealed that the addition of silicon decreased the acceptor density (NA, VCr-3), i.e., increased the Cr3 content of the passive film. Also the donor densities, shallow donor (ND1, VO2) and deep donor (ND2, VCr6), of the passive films formed were decreased. XPS analysis confirmed the presence of Si in the passive film of Si containing alloys. This enriched silicon along with higher Cr3 concentration of the passive film, dictated its enhanced protectiveness and stability.

UR - https://www.scopus.com/pages/publications/80054047825

U2 - 10.1149/2.083111jes

DO - 10.1149/2.083111jes

M3 - Article

AN - SCOPUS:80054047825

SN - 0013-4651

VL - 158

SP - C391-C395

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 11

ER -

Mott-schottky analysis of passive films on Si containing stainless steel alloys

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