Monte Carlo Simulation of the recombination contrast of dislocations

  • N. Tabet*
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

The Electron Beam Induced Current (EBIC) contrast of a surface perpendicular dislocation has been calculated using a Monte Carlo algorithm. The dislocation is described as a cylinder with a radius rD. The minority carrier lifetime within the cylinder, TD, is assumed to be smaller than that outside, TB. The dependence of the maximum contrast upon the primary beam energy E0, the carrier lifetimes TD and TB and the dislocation radius TD has been investigated. Our results are compared to those obtained by the analytical approach.

Original languageEnglish
Pages (from-to)89-96
Number of pages8
JournalSolid State Phenomena
Volume63-64
DOIs
StatePublished - 1998

Keywords

  • Dislocations
  • EBIC Contrast
  • Monte Carlo Simulation

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • General Materials Science
  • Condensed Matter Physics

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