Abstract
The electron beam induced current (EBIC) recombination contrast of grain boundaries (GB) is calculated by means of a Monte Carlo simulation algorithm. After considering a pointlike generation source, a three-dimensional distribution of pointlike sources is simulated and used to calculate the EBIC profiles across the grain boundary. In both cases, we observe a saturation of the maximum EBIC contrast as the carrier lifetime within the GB decreases. The results show, for a three dimensional electron probe, a linear dependence of the contrast on the GB width. In addition, extrapolated values of the maximum contrast obtained for a zero width GB are in good agreement with that calculated by analytical models.
| Original language | English |
|---|---|
| Pages (from-to) | 181-184 |
| Number of pages | 4 |
| Journal | Materials Science and Engineering B: Solid-State Materials for Advanced Technology |
| Volume | 42 |
| Issue number | 1-3 |
| DOIs | |
| State | Published - 15 Dec 1996 |
Keywords
- Electron beam induced current
- Grain boundaries
- Semiconductors
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering