Monte Carlo simulation of the charge collection contrast of spherical defects in semiconductors

The electron-beam-induced current contrast of a spherical defect near a Schottky contact has been calculated using a Monte Carlo algorithm. The collected current has been calculated by simulating the diffusion/recombination process of the carriers that are generated at point-like sources randomly distributed within the generation volume. The maximum contrast dependence upon the defect radius has been simulated. For a small size defect, the results show a good agreement with that obtained by using an analytical model. Computations have also been performed for a large size defect for which an analytical solution is too difficult.