Monolithic Tunable InAs/InP Broadband Quantum-Dash Laser

A two-sectioned quantum dash laser structure based on an InAs/InP chirped active region medium is investigated as a monolithic broadband tunable laser. A thorough parametric analysis on the effect of three tuning parameters (viz. injection current, cavity length, absorber-to-device length ratio) on the optical power-injection current (L-I) and spectral characteristics, particularly wavelength tunability and bandwidth broadening, is performed. A total emission wavelength tunability of 20 nm is demonstrated in the mid-L-band (1600 to 1620 nm) window and 2 times enhancement in the 3dB bandwidth. Furthermore, optical bistability in the two-sectioned InAs/InP quantum-dash laser device is observed at near room temperature in the form of L-I curve hysteresis. Further investigation displayed a direct relation between the absorber length and the hysteresis loop width with a maximum value of 40 mA is demonstrated; a potential platform in fast optical switching and modulation applications. Finally, the two-sectioned structure is also proposed and investigated as a monolithic two-segment contact spectrum shaper to manipulate the lasing spectrum profiles to attain flat tops and effectively increase the spectrum 3dB bandwidth. As such, a maximum 3dB bandwidth was able to be pushed up to 20 nm from 7 nm by proper tuning of the current density distribution across the two segments of the device.