Monolayer MoS2 self-switching diodes

Feras Al-Dirini, Faruque M. Hossain, Mahmood A. Mohammed, Md Sharafat Hossain, Ampalavanapillai Nirmalathas, Efstratios Skafidas

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

This paper presents a new molybdenum disulphide (MoS2) nanodevice that acts as a two-terminal field-effect rectifier. The device is an atomically-thin two-dimensional self-switching diode (SSD) that can be realized within a single MoS2 monolayer with very minimal process steps. Quantum simulation results are presented confirming the device's operation as a diode and showing strong non-linear I-V characteristics. Interestingly, the device shows p-type behavior, in which conduction is dominated by holes as majority charge carriers and the flow of reverse current is enhanced, while the flow of forward current is suppressed, in contrast to monolayer graphene SSDs, which behave as n-type devices. The presence of a large bandgap in monolayer MoS2 results in strong control over the channel, showing complete channel pinch-off in forward conduction, which was confirmed with transmission pathways plots. The device exhibited large leakage tunnelling current through the insulating trenches, which may have been due to the lack of passivation; nevertheless, reverse current remained to be 6 times higher than forward current, showing strong rectification. The effect of p-type substitutional channel doping of sulphur with phosphorus was investigated and showed that it greatly enhances the performance of the device, increasing the reverse-to-forward current rectification ratio more than an order of magnitude, up to a value of 70.

Original languageEnglish
Article number044506
JournalJournal of Applied Physics
Volume119
Issue number4
DOIs
StatePublished - 28 Jan 2016
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2016 AIP Publishing LLC.

ASJC Scopus subject areas

  • General Physics and Astronomy

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