Abstract
Rate-equation based numerical model for the analysis of two-section InAs/InP quantum-dash tunable laser is developed. The model takes into account quasi-zero dimensional density of states of dashes in the linear optical gain formulation besides incorporating both homogeneous and inhomogeneous broadening of the active region. The simulation results show a broad tunability of ~22 nm from longer 2000 µm device with 700 µm absorber length compared to 1000 µm device with 300 µm absorber length, which exhibited ~15 nm tuning window, in the L-band. Moreover, a sharp turn-on behavior is also observed, which is found to be in good agreement with our recent experimental results. Such devices and their comprehensive analysis would enable design optimization of two-section quantum-dash lasers, which are promising candidates as monolithic tunable lasers for next-generation access networks.
Original language | English |
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Title of host publication | PHOTOPTICS 2019 - Proceedings of the 7th International Conference on Photonics, Optics and Laser Technology |
Editors | Maria Raposo, Paulo Ribeiro, David Andrews |
Publisher | SciTePress |
Pages | 163-167 |
Number of pages | 5 |
ISBN (Electronic) | 9789897583643 |
DOIs | |
State | Published - 2019 |
Publication series
Name | PHOTOPTICS 2019 - Proceedings of the 7th International Conference on Photonics, Optics and Laser Technology |
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Bibliographical note
Publisher Copyright:© 2019 by SCITEPRESS - Science and Technology Publications, Lda. All rights reserved
Keywords
- Broadband Laser
- InAs/InP Quantum-dash Laser
- Rate-equation Model
- Tunable Laser
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics