Modeling a two-section monolithic InAs/InP quantum-dash laser: Wavelength tunability and sharp turn-on characteristics

M. Z.M. Khan*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Rate-equation based numerical model for the analysis of two-section InAs/InP quantum-dash tunable laser is developed. The model takes into account quasi-zero dimensional density of states of dashes in the linear optical gain formulation besides incorporating both homogeneous and inhomogeneous broadening of the active region. The simulation results show a broad tunability of ~22 nm from longer 2000 µm device with 700 µm absorber length compared to 1000 µm device with 300 µm absorber length, which exhibited ~15 nm tuning window, in the L-band. Moreover, a sharp turn-on behavior is also observed, which is found to be in good agreement with our recent experimental results. Such devices and their comprehensive analysis would enable design optimization of two-section quantum-dash lasers, which are promising candidates as monolithic tunable lasers for next-generation access networks.

Original languageEnglish
Title of host publicationPHOTOPTICS 2019 - Proceedings of the 7th International Conference on Photonics, Optics and Laser Technology
EditorsMaria Raposo, Paulo Ribeiro, David Andrews
PublisherSciTePress
Pages163-167
Number of pages5
ISBN (Electronic)9789897583643
DOIs
StatePublished - 2019

Publication series

NamePHOTOPTICS 2019 - Proceedings of the 7th International Conference on Photonics, Optics and Laser Technology

Bibliographical note

Publisher Copyright:
© 2019 by SCITEPRESS - Science and Technology Publications, Lda. All rights reserved

Keywords

  • Broadband Laser
  • InAs/InP Quantum-dash Laser
  • Rate-equation Model
  • Tunable Laser

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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