Mixed-state hall angle and hall conductivity in Hg, Re- containing HTSC thin films

A. Salem; G. Jakob; H. Adrian

doi:10.1088/1742-6596/43/1/065

Mixed-state hall angle and hall conductivity in Hg, Re- containing HTSC thin films

A. Salem^*
, G. Jakob
, H. Adrian

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

We investigated the magnetic field dependence of the longitudinal resistivity ρ_xx, the Hall resistivity ρ_xy, and the Hall angle (θ_H) at various temperatures of fully textured (Hg_0.9Re_0.1)Ba₂CaCu₂O _{6 + δ} (HgRe-1212) thin films prepared by pulsed laser deposition (PLD) and post-annealing. The films exhibit sharp superconducting transitions at T_c 124 K with transition widths of ΔT _c 2 K. At higher fields the Hall resistivities of the films have a nearly linear dependence on the field. The sign of the Hall resistivity in the low-.eld region near the transition temperature becomes negative. The total Hall conductivity for HgRe-1212 HTSC thin films can be described well by σ_yx(B) C₁/B + C₂B + C₃.

Original language	English
Article number	065
Pages (from-to)	259-262
Number of pages	4
Journal	Journal of Physics: Conference Series
Volume	43
Issue number	1
DOIs	https://doi.org/10.1088/1742-6596/43/1/065
State	Published - 1 Jun 2006
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

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abstract = "We investigated the magnetic field dependence of the longitudinal resistivity ρxx, the Hall resistivity ρxy, and the Hall angle (θH) at various temperatures of fully textured (Hg0.9Re0.1)Ba2CaCu2O 6 + δ (HgRe-1212) thin films prepared by pulsed laser deposition (PLD) and post-annealing. The films exhibit sharp superconducting transitions at Tc 124 K with transition widths of ΔT c 2 K. At higher fields the Hall resistivities of the films have a nearly linear dependence on the field. The sign of the Hall resistivity in the low-.eld region near the transition temperature becomes negative. The total Hall conductivity for HgRe-1212 HTSC thin films can be described well by σyx(B) C1/B + C2B + C3.",

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AU - Jakob, G.

AU - Adrian, H.

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Y1 - 2006/6/1

N2 - We investigated the magnetic field dependence of the longitudinal resistivity ρxx, the Hall resistivity ρxy, and the Hall angle (θH) at various temperatures of fully textured (Hg0.9Re0.1)Ba2CaCu2O 6 + δ (HgRe-1212) thin films prepared by pulsed laser deposition (PLD) and post-annealing. The films exhibit sharp superconducting transitions at Tc 124 K with transition widths of ΔT c 2 K. At higher fields the Hall resistivities of the films have a nearly linear dependence on the field. The sign of the Hall resistivity in the low-.eld region near the transition temperature becomes negative. The total Hall conductivity for HgRe-1212 HTSC thin films can be described well by σyx(B) C1/B + C2B + C3.

AB - We investigated the magnetic field dependence of the longitudinal resistivity ρxx, the Hall resistivity ρxy, and the Hall angle (θH) at various temperatures of fully textured (Hg0.9Re0.1)Ba2CaCu2O 6 + δ (HgRe-1212) thin films prepared by pulsed laser deposition (PLD) and post-annealing. The films exhibit sharp superconducting transitions at Tc 124 K with transition widths of ΔT c 2 K. At higher fields the Hall resistivities of the films have a nearly linear dependence on the field. The sign of the Hall resistivity in the low-.eld region near the transition temperature becomes negative. The total Hall conductivity for HgRe-1212 HTSC thin films can be described well by σyx(B) C1/B + C2B + C3.

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JF - Journal of Physics: Conference Series

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ER -

Mixed-state hall angle and hall conductivity in Hg, Re- containing HTSC thin films

Abstract

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