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Mid-IR optical properties of silicon doped InP
M. E. Aryaee Panah
*
, L. Han
,
K. Norrman
, N. Pryds
, A. Nadtochiy
, A. E. Zhukov
, A. V. Lavrinenko
, E. S. Semenova
*
Corresponding author for this work
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:
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Article
›
peer-review
17
Scopus citations
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Material Science
Carrier Concentration
100%
Optical Property
100%
Silicon
100%
Semiconductor Material
66%
Dielectric Material
33%
Fourier Transform Infrared Spectroscopy
33%
Plasmonic Metamaterials
33%
Metal
33%
Surface
33%
Optoelectronics
33%
Electrical Property
33%
Vapor Phase Epitaxy
33%
Materials
33%