Microwave performance of optically controlled mesfets

M. A. Alsunaidi; M. A. Al-Absi

doi:10.1109/ICECS.2003.1301754

Microwave performance of optically controlled mesfets

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

This paper presents the characterization of illuminated high-frequency active devices using a time - domain physical simulation model. The model is based on Boltzmann's Transport Equation (BTE), which accurately accounts for carrier transport in microwave and millimeter wave devices with sub-micrometer gate lengths. Illumination effects are accommodated in the model to represent carrier density changes inside the illuminated device. The simulation results are compared to available experimental records for a typical MESFET for validation purposes. The calculated y-parameters of the device show the profound effect of illumination on the microwave characteristics. These findings make the model an important tool for the design of active devices under illumination control.

Original language	English
Title of host publication	ICECS 2003 - Proceedings of the 2003 10th IEEE International Conference on Electronics, Circuits and Systems
Pages	1304-1307
Number of pages	4
DOIs	https://doi.org/10.1109/ICECS.2003.1301754
State	Published - 2003

Publication series

Name	Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems
Volume	3

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1109/ICECS.2003.1301754

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Alsunaidi, M. A., & Al-Absi, M. A. (2003). Microwave performance of optically controlled mesfets. In ICECS 2003 - Proceedings of the 2003 10th IEEE International Conference on Electronics, Circuits and Systems (pp. 1304-1307). Article 1301754 (Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems; Vol. 3). https://doi.org/10.1109/ICECS.2003.1301754

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title = "Microwave performance of optically controlled mesfets",

abstract = "This paper presents the characterization of illuminated high-frequency active devices using a time - domain physical simulation model. The model is based on Boltzmann's Transport Equation (BTE), which accurately accounts for carrier transport in microwave and millimeter wave devices with sub-micrometer gate lengths. Illumination effects are accommodated in the model to represent carrier density changes inside the illuminated device. The simulation results are compared to available experimental records for a typical MESFET for validation purposes. The calculated y-parameters of the device show the profound effect of illumination on the microwave characteristics. These findings make the model an important tool for the design of active devices under illumination control.",

author = "Alsunaidi, \{M. A.\} and Al-Absi, \{M. A.\}",

year = "2003",

doi = "10.1109/ICECS.2003.1301754",

language = "English",

isbn = "0780381637",

series = "Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems",

pages = "1304--1307",

booktitle = "ICECS 2003 - Proceedings of the 2003 10th IEEE International Conference on Electronics, Circuits and Systems",

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Microwave performance of optically controlled mesfets. / Alsunaidi, M. A.; Al-Absi, M. A.
ICECS 2003 - Proceedings of the 2003 10th IEEE International Conference on Electronics, Circuits and Systems. 2003. p. 1304-1307 1301754 (Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems; Vol. 3).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N2 - This paper presents the characterization of illuminated high-frequency active devices using a time - domain physical simulation model. The model is based on Boltzmann's Transport Equation (BTE), which accurately accounts for carrier transport in microwave and millimeter wave devices with sub-micrometer gate lengths. Illumination effects are accommodated in the model to represent carrier density changes inside the illuminated device. The simulation results are compared to available experimental records for a typical MESFET for validation purposes. The calculated y-parameters of the device show the profound effect of illumination on the microwave characteristics. These findings make the model an important tool for the design of active devices under illumination control.

AB - This paper presents the characterization of illuminated high-frequency active devices using a time - domain physical simulation model. The model is based on Boltzmann's Transport Equation (BTE), which accurately accounts for carrier transport in microwave and millimeter wave devices with sub-micrometer gate lengths. Illumination effects are accommodated in the model to represent carrier density changes inside the illuminated device. The simulation results are compared to available experimental records for a typical MESFET for validation purposes. The calculated y-parameters of the device show the profound effect of illumination on the microwave characteristics. These findings make the model an important tool for the design of active devices under illumination control.

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Microwave performance of optically controlled mesfets

Abstract

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