Measurement of absolute stopping cross sections by backscattering in thin dielectric films

E. E. Khawaja; S. M.A. Durrani; A. B. Hallak; M. A. Daous

doi:10.1016/0168-583X(94)00428-5

Measurement of absolute stopping cross sections by backscattering in thin dielectric films

E. E. Khawaja^*
, S. M.A. Durrani
, A. B. Hallak
, M. A. Daous

^*Corresponding author for this work

King Fahd University of Petroleum & Minerals

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The present work deals with a different approach to the existing method of backscattering in determining absolute stopping cross sections of light ions in thin dielectric films. In this method, the uncertain molecular density (molecules/cm³) of the film is replaced (using the Lorentz-Lorenz law) by refractive index of the film, refractive index and the molecular density of the corresponding bulk material, which may be known with better reliability. The method has been applied successfully to a study of the stopping cross sections of He²⁺ in thin films of MoO₃, TiO₂, Ge, ZnSe and ZnS.

Original language	English
Pages (from-to)	153-157
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	95
Issue number	2
DOIs	https://doi.org/10.1016/0168-583X(94)00428-5
State	Published - Feb 1995

ASJC Scopus subject areas

Nuclear and High Energy Physics
Instrumentation

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title = "Measurement of absolute stopping cross sections by backscattering in thin dielectric films",

abstract = "The present work deals with a different approach to the existing method of backscattering in determining absolute stopping cross sections of light ions in thin dielectric films. In this method, the uncertain molecular density (molecules/cm3) of the film is replaced (using the Lorentz-Lorenz law) by refractive index of the film, refractive index and the molecular density of the corresponding bulk material, which may be known with better reliability. The method has been applied successfully to a study of the stopping cross sections of He2+ in thin films of MoO3, TiO2, Ge, ZnSe and ZnS.",

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T1 - Measurement of absolute stopping cross sections by backscattering in thin dielectric films

AU - Khawaja, E. E.

AU - Durrani, S. M.A.

AU - Hallak, A. B.

AU - Daous, M. A.

PY - 1995/2

Y1 - 1995/2

N2 - The present work deals with a different approach to the existing method of backscattering in determining absolute stopping cross sections of light ions in thin dielectric films. In this method, the uncertain molecular density (molecules/cm3) of the film is replaced (using the Lorentz-Lorenz law) by refractive index of the film, refractive index and the molecular density of the corresponding bulk material, which may be known with better reliability. The method has been applied successfully to a study of the stopping cross sections of He2+ in thin films of MoO3, TiO2, Ge, ZnSe and ZnS.

AB - The present work deals with a different approach to the existing method of backscattering in determining absolute stopping cross sections of light ions in thin dielectric films. In this method, the uncertain molecular density (molecules/cm3) of the film is replaced (using the Lorentz-Lorenz law) by refractive index of the film, refractive index and the molecular density of the corresponding bulk material, which may be known with better reliability. The method has been applied successfully to a study of the stopping cross sections of He2+ in thin films of MoO3, TiO2, Ge, ZnSe and ZnS.

UR - https://www.scopus.com/pages/publications/4243896616

U2 - 10.1016/0168-583X(94)00428-5

DO - 10.1016/0168-583X(94)00428-5

M3 - Article

AN - SCOPUS:4243896616

SN - 0168-583X

VL - 95

SP - 153

EP - 157

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 2

ER -

Measurement of absolute stopping cross sections by backscattering in thin dielectric films

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